18423616. INTEGRATED CHIP AND METHOD OF FORMING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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INTEGRATED CHIP AND METHOD OF FORMING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Meng-Han Lin of Hsinchu (TW)

Yong-Shiuan Tsair of Tainan City (TW)

INTEGRATED CHIP AND METHOD OF FORMING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18423616 titled 'INTEGRATED CHIP AND METHOD OF FORMING THEREOF

Simplified Explanation

The integrated chip described in the patent application comprises a substrate, an isolation structure, and a gate structure. The isolation structure is located in the substrate and surrounds an active region, which includes a source region and a drain region separated by a channel region. The gate structure is positioned over the channel region and consists of a first gate electrode region and a second gate electrode region with different compositions.

  • The integrated chip includes a substrate, isolation structure, and gate structure.
  • The isolation structure encloses an active region with source and drain regions separated by a channel region.
  • The gate structure has two electrode regions with different compositions.

Potential Applications

The technology described in this patent application could be applied in:

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronic devices

Problems Solved

This technology addresses issues related to:

  • Improving performance and efficiency of integrated chips
  • Enhancing the functionality of electronic devices
  • Increasing the reliability of semiconductor devices

Benefits

The benefits of this technology include:

  • Higher performance and efficiency in electronic devices
  • Improved functionality and reliability of integrated chips
  • Potential for advancements in semiconductor technology

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Telecommunications
  • Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

  • Previous patents related to integrated circuit design and semiconductor manufacturing processes

Unanswered Questions

How does the composition of the gate electrode regions impact the performance of the integrated chip?

The composition of the gate electrode regions could affect the conductivity and switching characteristics of the chip, but the specific details of this impact are not provided in the abstract.

What are the specific materials used for the first and second gate electrode regions?

The abstract mentions that the first and second gate electrode regions have different compositions, but it does not specify the exact materials used for these regions.


Original Abstract Submitted

An integrated chip comprises a substrate, an isolation structure and a gate structure. The isolation structure is disposed in the substrate and enclosing an active region in the substrate. The active region comprises a source region and a drain region separated by a channel region along a first direction. The gate structure is disposed over the channel region and comprising a first gate electrode region and a second gate electrode region arranged one next to another laterally along a second direction perpendicular to the first direction. The first gate electrode region has a first composition, and the second gate electrode region has a second composition different than the first composition.