18422726. INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

INTEGRATED CIRCUIT DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Hsia-Wei Chen of Taipei City (TW)

Fu-Ting Sung of Taoyuan City (TW)

Yu-Wen Liao of New Taipei City (TW)

Wen-Ting Chu of Kaohsiung City (TW)

Fa-Shen Jiang of Taoyuan City (TW)

Tzu-Hsuan Yeh of Taoyuan City (TW)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18422726 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The integrated circuit device described in the patent application includes various features such as an interconnect layer, a memory structure, and conductive lines. The memory structure contains a resistance switching element and is in contact with the first conductive feature. The interconnect layer consists of multiple conductive features, including the first and second conductive features. The third conductive feature, which includes a first conductive line, is in contact with the second conductive feature. The fourth conductive feature, which includes a second conductive line, is in contact with the memory structure. The top surface of the first conductive line aligns with the top surface of the second conductive line, while the bottom surface of the first conductive line is lower than the bottommost portion of the second conductive line.

• The integrated circuit device includes an interconnect layer with multiple conductive features.
• The memory structure contains a resistance switching element and is in contact with the first conductive feature.
• The third conductive feature, with a first conductive line, is in contact with the second conductive feature.
• The fourth conductive feature, with a second conductive line, is in contact with the memory structure.

Potential Applications

This technology could be applied in:

• Memory devices
• Integrated circuits
• Semiconductor industry

Problems Solved

This technology helps in:

• Improving memory storage
• Enhancing circuit performance
• Increasing data processing speed

Benefits

The benefits of this technology include:

• Higher efficiency in data storage
• Improved overall performance of integrated circuits
• Enhanced reliability of memory structures

Potential Commercial Applications

Optimized for SEO: "Innovative Memory Structure Technology for Integrated Circuits" This technology could be commercially applied in:

• Consumer electronics
• Computer hardware
• Telecommunications industry

Possible Prior Art

There may be prior art related to:

• Memory structure design in integrated circuits
• Conductive feature alignment in semiconductor devices

Unanswered Questions

How does this technology impact power consumption in integrated circuits?

The patent application does not provide information on the power consumption implications of this technology. Further research or testing may be needed to determine its effects on power usage.

What are the potential scalability limitations of this technology?

The scalability limitations of this technology are not addressed in the patent application. It would be important to investigate how this innovation performs as the size of the integrated circuit device increases.

Original Abstract Submitted

An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over and in contact with the first conductive feature. The memory structure includes at least a resistance switching element over the first conductive feature. The third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. The fourth conductive feature is over and in contact with the memory structure. The fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.