18421988. PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Kazuya Nagaseki of Miyagi (JP)
Satoru Teruuchi of Miyagi (JP)
PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421988 titled 'PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
The patent application describes a method for performing plasma processing on a substrate by utilizing a temperature adjustment target and a heat transfer layer.
- Placing a temperature adjustment target on a substrate support surface
- Forming a heat transfer layer using a heat transfer medium between the target and the support surface
- Conducting plasma processing on the substrate with the heat transfer layer in place
- Separating the temperature adjustment target after the plasma processing
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems Solved: - Efficient heat transfer during plasma processing - Temperature control on the substrate surface
Benefits: - Improved processing quality - Enhanced substrate temperature control - Increased productivity in plasma processing operations
Commercial Applications: Title: Enhanced Plasma Processing Method for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities to optimize plasma processing operations, leading to higher quality products and increased production efficiency.
Questions about the technology: 1. How does the heat transfer layer improve the plasma processing on the substrate? 2. What are the specific benefits of using a temperature adjustment target in this method?
Original Abstract Submitted
A processing method for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a decompressible processing, forming a heat transfer layer by supplying, through the substrate support, a heat transfer medium including at least one of a liquid medium or a solid medium with fluidity to between the support surface of the substrate support and a back surface of the temperature adjustment target, performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed, and separating the temperature adjustment target from the support surface after the plasma processing.
