18421820. ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL simplified abstract (Micron Technology, Inc.)

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ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL

Organization Name

Micron Technology, Inc.

Inventor(s)

Michael A. Lindemann of Boise ID (US)

Collin Howder of Boise ID (US)

Yoshiaki Fukuzumi of Yokohama (JP)

Richard J. Hill of Boise ID (US)

ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18421820 titled 'ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL

Simplified Explanation

The patent application describes electronic devices with a specific structure involving doped dielectric material, conductive and dielectric tiers, and pillars extending through them.

  • Doped dielectric material is located next to a source contact.
  • Tiers consist of alternating conductive and dielectric materials adjacent to the doped dielectric material.
  • Pillars extend through the tiers, doped dielectric material, and source contact into the source stack.

Potential Applications

This technology could be applied in:

  • Semiconductor devices
  • Integrated circuits
  • Microelectronics

Problems Solved

This innovation addresses:

  • Enhanced performance of electronic devices
  • Improved conductivity and insulation properties
  • Increased efficiency and reliability of electronic systems

Benefits

The benefits of this technology include:

  • Higher speed and efficiency in electronic devices
  • Better heat dissipation capabilities
  • Reduced power consumption

Potential Commercial Applications

The potential commercial applications of this technology include:

  • Consumer electronics
  • Telecommunications equipment
  • Automotive electronics

Possible Prior Art

One possible prior art could be the use of doped dielectric materials in electronic devices to improve performance and reliability.

What are the specific conductive and dielectric materials used in the tiers of the electronic devices described in the patent application?

The specific conductive and dielectric materials used in the tiers are not mentioned in the abstract. Further details would be needed to determine the exact materials utilized.

How do the pillars extending through the tiers, doped dielectric material, and source contact contribute to the overall functionality of the electronic devices?

The abstract does not provide specific information on how the pillars contribute to the functionality of the electronic devices. Additional details or the full patent application would be required to understand the role of the pillars in the device operation.


Original Abstract Submitted

Electronic devices comprising a doped dielectric material adjacent to a source contact, tiers of alternating conductive materials and dielectric materials adjacent to the doped dielectric material, and pillars extending through the tiers, the doped dielectric material, and the source contact and into the source stack. Related methods and electronic systems are also disclosed.