18421783. METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chi-Hung Liao of New Taipei City (TW)
Yueh-Lin Yang of Tainan City (TW)
METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421783 titled 'METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE
Simplified Explanation
The abstract describes a lithography method in semiconductor fabrication involving the generation of droplets of a target material, conversion into plasma using a laser pulse, and reflection of extreme ultraviolet radiation.
- Generation of droplets through specific nozzles to form elongated droplets
- Conversion of elongated droplets into plasma using a laser pulse
- Reflection of extreme ultraviolet radiation by a collector mirror
- Generation of second set of droplets at a different angle than the first set
Potential Applications
This technology can be applied in the semiconductor industry for advanced lithography processes, specifically in the production of integrated circuits and other electronic components.
Problems Solved
This technology helps in achieving high precision and accuracy in semiconductor fabrication, enabling the production of smaller and more efficient electronic devices.
Benefits
The benefits of this technology include improved resolution, increased productivity, and enhanced performance of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology include semiconductor manufacturing companies, lithography equipment suppliers, and research institutions in the field of nanotechnology.
Possible Prior Art
One possible prior art in this field is the use of laser-based lithography techniques for semiconductor fabrication, which have been developed and refined over the years to improve efficiency and accuracy.
Unanswered Questions
How does this method compare to existing lithography techniques in terms of cost-effectiveness?
The article does not provide information on the cost-effectiveness of this method compared to other lithography techniques. Further research and analysis would be needed to determine the economic viability of implementing this technology.
What are the potential challenges in scaling up this method for mass production in semiconductor manufacturing?
The article does not address the scalability of this method for mass production in semiconductor manufacturing. Understanding the challenges and limitations in scaling up this technology would be crucial for its practical implementation on an industrial scale.
Original Abstract Submitted
A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of first drops of a target material through a first nozzle group selected from a plurality of nozzles to form a first elongated droplet; generating a first laser pulse to convert the first elongated droplet into plasma that generates a first extreme ultraviolet (EUV) radiation; reflecting the first EUV radiation by a collector mirror having an optical axis; generating a plurality of second drops of the target material through a second nozzle group selected from the plurality of nozzles to form a second elongated droplet, the second elongated droplet being oblique with the optical axis of the collector mirror at a different angle than the first elongated droplet.
