18421683. INTEGRATED CIRCUIT DEVICE AND METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE AND METHODS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shih-Lien Linus Lu of Hsinchu (TW)
Sai-Hooi Yeong of Hsinchu (TW)
INTEGRATED CIRCUIT DEVICE AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421683 titled 'INTEGRATED CIRCUIT DEVICE AND METHODS
Simplified Explanation
The integrated circuit (IC) device described in the patent application includes memory cells with multiple memory elements arranged in rows along different axes.
- The first memory element is positioned between a bit line and a first auxiliary conductive line along a first axis.
- The second memory element is located between a second auxiliary conductive line and a first conductor along the same first axis.
- The third memory element is placed between the first auxiliary conductive line and a second conductor connected to the first conductor.
- The fourth memory element is positioned between the bit line and the second auxiliary conductive line.
- The third and fourth memory elements are arranged in a second row, spaced from the first row along a transverse axis.
Potential Applications
This technology could be applied in:
- Memory devices
- Computer systems
- Data storage systems
Problems Solved
This technology helps in:
- Increasing memory density
- Improving data storage efficiency
Benefits
The benefits of this technology include:
- Enhanced memory performance
- Higher data storage capacity
Potential Commercial Applications
This technology could be commercially used in:
- Consumer electronics
- Cloud computing servers
- Data centers
Possible Prior Art
One possible prior art for this technology could be:
- Previous memory cell designs with similar configurations
Unanswered Questions
How does this technology impact power consumption in devices?
The patent abstract does not provide information on the power consumption implications of this technology.
Are there any limitations to the scalability of this memory cell design?
The scalability of the memory cell design in terms of size and complexity is not addressed in the patent abstract.
Original Abstract Submitted
An integrated circuit (IC) device includes memory cells each including first through fourth memory elements. The first memory element is physically arranged, along a first axis, between a bit line and a first auxiliary conductive line. The second memory element is physically arranged, along the first axis, between a second auxiliary conductive line and a first conductor. The first and second memory elements are arranged in a first row along the first axis. The third memory element is physically arranged, along the first axis, between the first auxiliary conductive line and a second conductor electrically coupled to the first conductor. The fourth memory element is physically arranged, along the first axis, between the bit line and the second auxiliary conductive line. The third and fourth memory elements are arranged, along the first axis, in a second row spaced from the first row along an axis transverse to the first axis.
