18421398. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Hung Cheng Lin of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421398 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
The abstract describes a semiconductor device manufacturing method involving the creation of inner spacers for nanostructures through the deposition and treatment of a dielectric material to close any seams that could interfere with subsequent processes.
- Dielectric material is deposited for inner spacer creation.
- Treatment is applied to add material and cause volume expansion.
- Volume expansion closes any seams that may hinder later processes.
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits, where precise control over nanostructures is crucial.
Problems Solved
1. Ensures seamless inner spacers for nanostructures, preventing interference with subsequent processes. 2. Facilitates the production of high-performance semiconductor devices with improved reliability and efficiency.
Benefits
1. Enhanced precision and control over nanostructure fabrication. 2. Increased yield and quality of semiconductor devices. 3. Streamlined manufacturing processes leading to cost savings.
Potential Commercial Applications
Optimizing Inner Spacer Creation for Advanced Semiconductor Devices
Possible Prior Art
Prior art may include methods for creating inner spacers in semiconductor devices, such as using different materials or techniques to achieve similar results.
Unanswered Questions
How does the treatment process impact the overall performance of the semiconductor device?
The article does not delve into the specific effects of the treatment process on the functionality or characteristics of the semiconductor device.
Are there any limitations or challenges associated with the deposition and treatment of the dielectric material for inner spacer creation?
The article does not address any potential limitations or challenges that may arise during the deposition and treatment processes.
Original Abstract Submitted
Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.
