18421155. BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shuen-Shin Liang of Hsinchu County (TW)

Chen-Han Wang of Zhubei City (TW)

Keng-Chu Lin of Chao-Chou Ping-Tung (TW)

Tetsuji Ueno of Hsinchu City (TW)

Ting-Ting Chen of New Taipei City (TW)

BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18421155 titled 'BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES

Simplified Explanation

The present disclosure describes a method for forming a semiconductor device by creating an opening between two opposing sidewalls of terminals, depositing dielectric materials to trap a pocket of air, and performing a treatment process on the dielectric material.

• Opening formed between first and second sidewalls of terminals
• Dielectric materials deposited at different rates to trap air pocket
• Treatment process performed on dielectric material

Potential Applications

The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as transistors, diodes, and integrated circuits.

Problems Solved

This method helps in improving the insulation properties of the semiconductor device by trapping a pocket of air between the dielectric materials, which can enhance the overall performance and reliability of the device.

Benefits

- Enhanced insulation properties - Improved performance and reliability of semiconductor devices - Potential for miniaturization and increased functionality

Potential Commercial Applications

The technology could be utilized in the production of advanced electronic devices, communication systems, and computing equipment.

Possible Prior Art

One possible prior art could be the use of different dielectric materials in semiconductor device fabrication to improve insulation properties. However, the specific method of trapping a pocket of air between the dielectric materials as described in this patent application may be novel.

How does this method compare to existing techniques for improving insulation properties in semiconductor devices?

This method offers a unique approach by trapping a pocket of air between dielectric materials, which may provide enhanced insulation compared to traditional methods. Further research and testing would be needed to compare its effectiveness with existing techniques.

What are the potential challenges or limitations of implementing this method in large-scale semiconductor manufacturing processes?

One potential challenge could be the precise control and uniformity of depositing the dielectric materials at different rates to trap the air pocket. Ensuring consistency and reliability in a mass production setting may require optimization and refinement of the process.

Original Abstract Submitted

The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. The second dielectric material and the first and second sidewalls entrap a pocket of air. The method also includes performing a treatment process on the second dielectric material.