18421121. SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Hsiao-Chun Chang of Hsinchu County (TW)

Guan-Jie Shen of Hsinchu City (TW)

SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18421121 titled 'SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE

The present disclosure discusses a semiconductor structure and a method for its formation. The structure includes a substrate, a fin structure, a gate structure, and an epitaxial region with specific semiconductor layers.

• The semiconductor structure consists of a substrate, a fin structure, a gate structure, and an epitaxial region.
• The epitaxial region contains a first semiconductor layer and an n-type second semiconductor layer.
• The lattice constant of the first semiconductor layer is greater than that of the second semiconductor layer.

Potential Applications: - This technology can be applied in the semiconductor industry for advanced electronic devices. - It can be used in the development of high-performance transistors and integrated circuits.

Problems Solved: - Addresses the need for improved semiconductor structures with enhanced performance. - Solves challenges related to the integration of different semiconductor materials in a single structure.

Benefits: - Enhanced performance and efficiency in electronic devices. - Improved reliability and stability of semiconductor components.

Commercial Applications: Title: Advanced Semiconductor Structures for High-Performance Electronics This technology can be utilized in the production of cutting-edge electronic devices such as smartphones, computers, and IoT devices. It has the potential to revolutionize the semiconductor industry by enabling the development of faster and more energy-efficient devices.

Questions about Semiconductor Structures: 1. How does the lattice constant of semiconductor layers impact the performance of electronic devices? The lattice constant affects the compatibility and stability of different semiconductor materials in a structure, influencing the overall performance of the device. 2. What are the key considerations in designing epitaxial regions for semiconductor structures? Designing epitaxial regions involves optimizing the properties of the semiconductor layers to achieve desired performance characteristics.

Original Abstract Submitted

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.