18421001. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
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INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421001 titled 'INTEGRATED CIRCUIT DEVICES
The integrated circuit device described in the patent application features a fin-type active region, a channel region, a gate line, and a source/drain region with multiple semiconductor layers, including a layer with a high germanium (Ge) content that decreases towards the boundary with the next layer.
- The device includes a fin-type active region extending in one direction.
- A channel region is located on the fin-type active region.
- A gate line extends in a different direction on the channel region.
- The source/drain region consists of multiple semiconductor layers.
- The first semiconductor layer in the source/drain region has a high Ge content that decreases towards the next layer.
Potential Applications: - This technology could be used in the development of advanced integrated circuits for various electronic devices. - It may enhance the performance and efficiency of semiconductor devices.
Problems Solved: - Improved conductivity and performance in semiconductor devices. - Enhanced integration and miniaturization of electronic components.
Benefits: - Higher efficiency and performance in integrated circuits. - Potential for smaller and more powerful electronic devices.
Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Integrated Circuits This technology could be utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers, leading to faster and more efficient operations in various industries.
Questions about the technology: 1. How does the high germanium content in the first semiconductor layer impact the performance of the integrated circuit device? 2. What are the potential challenges in manufacturing integrated circuits with multiple semiconductor layers, including those with varying germanium content?
Original Abstract Submitted
The integrated circuit device includes a fin-type active region extending in a first direction, a channel region on the fin-type active region, a gate line on the channel region and extending in a second direction, and a source/drain region on the fin-type active region and in contact with the channel region, wherein the source/drain region includes a plurality of semiconductor layers including a first semiconductor layer that includes a portion in contact with the channel region and a portion in contact with the fin-type active region, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, a germanium (Ge) content ratio in the first semiconductor layer is greater than or equal to 10 at % and less than 100 at %, and the Ge content ratio in the first semiconductor layer decreases towards a boundary with the second semiconductor layer.
