18420777. SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Seong-Wan Ryu of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18420777 titled 'SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the abstract consists of a substrate with a first source/drain region and a second source/drain region separated by a trench. A gate structure is located in the trench, comprising a gate dielectric layer, a first gate electrode, a second gate electrode, and a dipole inducing layer.
- The semiconductor device features a unique gate structure design with a dipole inducing layer.
- The gate dielectric layer is formed on the bottom and sidewalls of the trench.
- The first gate electrode is positioned in the bottom portion of the trench over the gate dielectric layer.
- The second gate electrode is placed over the first gate electrode.
- The dipole inducing layer is situated between the first and second gate electrodes and the sidewalls of the second gate electrode and the gate dielectric layer.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It may find use in the development of high-performance electronic components.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides a novel approach to gate structure design in semiconductor technology.
Benefits: - Improved functionality and reliability of semiconductor devices. - Enhanced performance capabilities for electronic applications.
Commercial Applications: Title: Innovative Gate Structure for Advanced Semiconductor Devices This technology can be utilized in the production of cutting-edge electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the dipole inducing layer contribute to the performance of the semiconductor device? 2. What are the potential implications of this gate structure design on the semiconductor industry?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and gate structure designs to ensure the continued relevance and competitiveness of this innovation.
Original Abstract Submitted
A semiconductor device includes: a substrate; a first source/drain region and a second source/drain region spaced apart from each other by a trench in the substrate; and a gate structure in the trench, wherein the gate structure includes: a gate dielectric layer formed on a bottom and sidewalls of the trench; a first gate electrode positioned in a bottom portion of the trench over the gate dielectric layer; a second gate electrode positioned over the first gate electrode; and a dipole inducing layer formed between the first gate electrode and the second gate electrode and between sidewalls of the second gate electrode and the gate dielectric layer.
