18420016. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

SHUHEI Ichikawa of Nisshin-shi (JP)

HIROKI Miyake of Nisshin-shi (JP)

TATSUJI Nagaoka of Nisshin-shi (JP)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18420016 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Simplified Explanation: This patent application describes a method for manufacturing a semiconductor device using a semiconductor substrate made of β-gallium oxide. The substrate is subjected to a heat treatment process in a chamber to enhance its properties.

  • The semiconductor substrate is prepared with a surface orientation in a specific range with respect to certain crystal planes.
  • The substrate is placed on a susceptor in a sealed chamber, and a heat treatment process is performed.
  • During the heat treatment, the temperature of the substrate is controlled by adjusting the temperature of the susceptor.
  • The temperature of the substrate is increased to 300°C or more at a controlled rate before being decreased.
  • The chamber is then unsealed after the heat treatment process is completed.

Key Features and Innovation:

  • Use of a semiconductor substrate made of β-gallium oxide.
  • Controlled heat treatment process to enhance semiconductor properties.
  • Temperature control by adjusting the susceptor temperature.
  • Specific temperature increase rate during the heat treatment.

Potential Applications: This technology can be applied in the manufacturing of various semiconductor devices such as power electronics, sensors, and optoelectronic devices.

Problems Solved:

  • Enhancing the properties of semiconductor substrates made of β-gallium oxide.
  • Improving the efficiency and performance of semiconductor devices.

Benefits:

  • Enhanced semiconductor properties.
  • Improved performance and efficiency of semiconductor devices.
  • Controlled and precise heat treatment process.

Commercial Applications: Potential commercial applications include the production of high-performance power electronics, advanced sensors, and efficient optoelectronic devices for various industries.

Questions about Semiconductor Device Manufacturing: 1. How does the use of a semiconductor substrate made of β-gallium oxide impact the performance of semiconductor devices? 2. What are the specific advantages of the controlled heat treatment process described in this patent application?


Original Abstract Submitted

In a manufacturing method of a semiconductor device, a semiconductor substrate made of β-gallium oxide and having a first surface or a second surface in a range of 45 to 90° with respect to a (100) plane or to a (001) plane is prepared. The semiconductor substrate is placed on a susceptor in a chamber so that the second surface faces the susceptor. The chamber is sealed, and a heat treatment is performed. In the heat treatment, a temperature of the semiconductor substrate is increased and then decreased by heat transfer by adjusting a temperature of the susceptor. The sealing of the chamber is then released. In the heat treatment, the temperature of the semiconductor substrate is increased to 300° C. or more by increasing a temperature of the susceptor at a temperature increase rate of 100° C./min or less.

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