18420016. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
Contents
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SHUHEI Ichikawa of Nisshin-shi (JP)
HIROKI Miyake of Nisshin-shi (JP)
TATSUJI Nagaoka of Nisshin-shi (JP)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18420016 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The patent application describes a manufacturing method for a semiconductor device using a semiconductor substrate made of β-gallium oxide.
- Semiconductor substrate prepared with a first or second surface at an angle of 45 to 90 degrees with respect to a (100) or (001) plane.
- Heat treatment process involves adjusting the temperature of the substrate by controlling the temperature of the susceptor.
- Temperature of the substrate is increased to 300°C or more at a rate of 100°C/min or less during the heat treatment.
Potential Applications: - Semiconductor manufacturing industry - Electronics industry for high-performance devices
Problems Solved: - Efficient heat treatment process for semiconductor substrates - Improved control over temperature during manufacturing
Benefits: - Enhanced performance of semiconductor devices - Cost-effective manufacturing process
Commercial Applications: Title: Advanced Semiconductor Manufacturing Method This technology can be used in the production of high-performance semiconductor devices, catering to the growing demand for advanced electronics in various industries.
Questions about Semiconductor Manufacturing Method: 1. How does the use of β-gallium oxide in semiconductor substrates impact device performance?
- The use of β-gallium oxide can enhance the efficiency and performance of semiconductor devices due to its unique properties.
2. What are the key advantages of controlling the temperature of the substrate during the manufacturing process?
- By controlling the temperature, manufacturers can ensure uniform heat treatment, leading to improved device quality and performance.
Original Abstract Submitted
In a manufacturing method of a semiconductor device, a semiconductor substrate made of β-gallium oxide and having a first surface or a second surface in a range of 45 to 90° with respect to a (100) plane or to a (001) plane is prepared. The semiconductor substrate is placed on a susceptor in a chamber so that the second surface faces the susceptor. The chamber is sealed, and a heat treatment is performed. In the heat treatment, a temperature of the semiconductor substrate is increased and then decreased by heat transfer by adjusting a temperature of the susceptor. The sealing of the chamber is then released. In the heat treatment, the temperature of the semiconductor substrate is increased to 300° C. or more by increasing a temperature of the susceptor at a temperature increase rate of 100° C./min or less.
