18419987. ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Song-Fu Liao of Taipei City (TW)

Rainer Yen-Chieh Huang of Changhua County (TW)

Hai-Ching Chen of Hsinchu City (TW)

Chung-Te Lin of Tainan City (TW)

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18419987 titled 'ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER

Simplified Explanation

The present disclosure describes an integrated chip with a memory layer containing a ferroelectric material, an annealed seed layer, and specific crystal structures.

  • The integrated chip includes a first conductive structure over a substrate.
  • A memory layer with a ferroelectric material is located over the first conductive structure, below a second conductive structure.
  • An annealed seed layer is positioned between the first and second conductive structures, directly on one side of the memory layer.
  • The crystal structure of the memory layer contains an orthorhombic phase of over 35 percent.

Potential Applications

This technology could be applied in:

  • Memory devices
  • Semiconductor industry
  • Data storage systems

Problems Solved

This innovation addresses:

  • Improving memory storage capacity
  • Enhancing data retention in memory devices

Benefits

The benefits of this technology include:

  • Increased memory performance
  • Higher data storage density
  • Enhanced reliability of memory devices

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

  • Consumer electronics
  • Computer hardware
  • Data centers

Possible Prior Art

There may be prior art related to:

  • Ferroelectric memory devices
  • Semiconductor memory structures

What are the specific materials used in the memory layer of the integrated chip?

The abstract does not provide detailed information on the specific materials used in the memory layer of the integrated chip.

How does the annealed seed layer contribute to the performance of the integrated chip?

The abstract does not explain how the annealed seed layer contributes to the performance of the integrated chip.


Original Abstract Submitted

In some embodiments, the present disclosure relates to an integrated chip that includes a first conductive structure arranged over a substrate. A memory layer is arranged over the first conductive structure, below a second conductive structure, and includes a ferroelectric material. An annealed seed layer is arranged between the first and second conductive structures and directly on a first side of the memory layer. An amount of the crystal structure that includes an orthorhombic phase is greater than about 35 percent.

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