18419973. FIELD EFFECT TRANSISTOR simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

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FIELD EFFECT TRANSISTOR

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

Ryota Suzuki of Nisshin-shi (JP)

FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18419973 titled 'FIELD EFFECT TRANSISTOR

Simplified Explanation: The patent application describes a field effect transistor design where trench lower layers are positioned directly beneath corresponding trenches. Deep p-type layers run along one direction intersecting the trenches, with intervals along another direction perpendicular to the first. A drain-side layer of n-type extends from the lower surface of a body layer to below the deep layers through intervals between them, containing high and intermediate concentration layers.

  • Deep p-type layers extend along one direction intersecting the trenches.
  • The deep layers are arranged at intervals along a direction orthogonal to the first.
  • A drain-side layer of n-type is distributed from the lower surface of a body layer to below the deep layers through intervals between them.
  • The drain-side layer includes a high concentration layer and an intermediate concentration layer.
  • The high concentration layer is present in a depth range where both the deep layers and trench lower layers exist.

Potential Applications: 1. Semiconductor manufacturing 2. Electronics industry 3. Power management systems

Problems Solved: 1. Enhanced performance of field effect transistors 2. Improved efficiency in power management 3. Increased reliability in electronic devices

Benefits: 1. Higher transistor performance 2. Improved power efficiency 3. Enhanced reliability in electronic systems

Commercial Applications: The technology could be utilized in the development of advanced semiconductor devices for various industries, including telecommunications, computing, and automotive sectors.

Questions about Field Effect Transistors: 1. How do field effect transistors differ from bipolar junction transistors? 2. What are the key advantages of using field effect transistors in electronic circuits?

Frequently Updated Research: Ongoing research in the field of semiconductor materials and device design may lead to further advancements in field effect transistor technology, improving performance and efficiency in electronic systems.


Original Abstract Submitted

In a field effect transistor, trench lower layers are disposed directly below corresponding trenches. Deep layers of p-type extend along a first direction intersecting the trenches and are arranged at intervals along a second direction orthogonal to the first direction. A drain-side layer of n-type is distributed from a position in contact with a lower surface of a body layer to a position below a lower end of each of the deep layers through intervals between the deep layers. The drain-side layer includes a high concentration layer distributed in at least a part of a depth range in which both the deep layers and the trench lower layers are present, and an intermediate concentration layer distributed in at least a part of a depth range between a lower end of the high concentration layer and a lower end of each of the deep layers.

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