18419947. BOND PAD STRUCTURE FOR BONDING IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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BOND PAD STRUCTURE FOR BONDING IMPROVEMENT

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Sin-Yao Huang of Tainan City (TW)

Ching-Chun Wang of Tainan (TW)

Dun-Nian Yaung of Taipei City (TW)

Feng-Chi Hung of Chu-Bei City (TW)

Ming-Tsong Wang of Taipei City (TW)

Shih Pei Chou of Tainan City (TW)

BOND PAD STRUCTURE FOR BONDING IMPROVEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18419947 titled 'BOND PAD STRUCTURE FOR BONDING IMPROVEMENT

Simplified Explanation

The integrated circuit (IC) described in the patent application includes a complex interconnect structure with multiple stacked metal features, where a recess extends into the structure terminating at a bond pad that directly contacts the lowermost metal feature.

  • The IC includes a first substrate with an interconnect structure consisting of multiple stacked metal features.
  • The lowermost metal feature is closest to the substrate, while the uppermost metal feature is furthest from the substrate.
  • Intermediate metal features are positioned between the lowermost and uppermost metal features.
  • A recess within the interconnect structure terminates at a bond pad, with the lower surface of the bond pad directly contacting the upper surface of the lowermost metal feature.

Potential Applications

This technology could be applied in:

  • Semiconductor manufacturing
  • Microelectronics industry

Problems Solved

This innovation addresses:

  • Improved signal transmission efficiency
  • Enhanced reliability of interconnect structures

Benefits

The benefits of this technology include:

  • Higher performance in integrated circuits
  • Increased durability and longevity of IC components

Potential Commercial Applications

This technology could be commercially utilized in:

  • Consumer electronics
  • Telecommunications equipment

Possible Prior Art

One possible prior art could be the use of stacked metal features in interconnect structures in semiconductor devices.

Unanswered Questions

How does this technology impact the overall size of the integrated circuit?

The abstract does not provide information on whether this innovation affects the size of the IC.

What materials are used for the metal features in the interconnect structure?

The abstract does not specify the materials used for the metal features in the IC.


Original Abstract Submitted

Some embodiments relate an integrated circuit (IC) including a first substrate. An interconnect structure is disposed over the first substrate. The interconnect structure includes a plurality of metal features that are stacked over one another. A lowermost metal feature of the plurality of metal features is closest to the first substrate, an uppermost metal feature of the plurality of metal features is furthest from the first substrate, and intermediate metal features are disposed between the lowermost metal feature and the uppermost metal feature. A recess extends into the interconnect structure and terminates at a bond pad. A lower surface of the bond pad directly contacts an upper surface of the lowermost metal feature.

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