18419895. MODIFIED READ COUNTER INCREMENTING SCHEME IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)

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MODIFIED READ COUNTER INCREMENTING SCHEME IN A MEMORY SUB-SYSTEM

Organization Name

Micron Technology, Inc.

Inventor(s)

Kishore Kumar Muchherla of San Jose CA (US)

Jonathan S. Parry of Boise ID (US)

Nicola Ciocchini of Boise ID (US)

Animesh Roy Chowdhury of Boise ID (US)

Akira Goda of Tokyo (JP)

Jung Sheng Hoei of Newark CA (US)

Niccolo’ Righetti of Boise ID (US)

Ugo Russo of Boise ID (US)

MODIFIED READ COUNTER INCREMENTING SCHEME IN A MEMORY SUB-SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18419895 titled 'MODIFIED READ COUNTER INCREMENTING SCHEME IN A MEMORY SUB-SYSTEM

Simplified Explanation

The abstract describes a system with a memory device and a processing device that performs media management operations on the same set of memory cells in response to read commands.

  • Memory device with multiple memory cells
  • Processing device receives read commands at different times
  • Same set of memory cells targeted by read commands
  • Processing device performs media management operations on the memory cells

Potential Applications

The technology described in this patent application could be applied in various fields such as:

  • Data storage systems
  • Computer memory management
  • Embedded systems

Problems Solved

This technology addresses the following issues:

  • Efficient management of memory cells
  • Optimizing read commands for the same set of memory cells
  • Enhancing overall system performance

Benefits

The benefits of this technology include:

  • Improved memory access speed
  • Enhanced data storage efficiency
  • Streamlined media management operations

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

  • Solid-state drives (SSDs)
  • Mobile devices
  • Cloud storage services

Possible Prior Art

One possible prior art related to this technology is the concept of wear leveling in flash memory systems, where data is evenly distributed across memory cells to prolong the lifespan of the storage device.

Unanswered Questions

How does this technology impact power consumption in devices?

The article does not address the potential impact of this technology on power consumption in devices. Implementing media management operations on memory cells may require additional processing power, which could affect the overall power efficiency of the system.

What are the potential security implications of this technology?

The article does not discuss the security implications of performing media management operations on the same set of memory cells. It is important to consider how this technology may impact data security and privacy, especially in sensitive applications such as financial transactions or personal data storage.


Original Abstract Submitted

A system includes a memory device including multiple memory cells and a processing device operatively coupled to the memory device. The processing device is to receive a first read command at a first time. The processing device is further to receive a second read command at a second time. The processing device is further to determine that the first read command and the second read command are directed to an at least partially same set of memory cells of the plurality of memory cells. The processing device is further to perform a media management operation with respect to the at least partially same set of memory cells.