18419715. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Gyeongseop Kim of Suwon-si (KR)
Jaeyoung Park of Suwon-si (KR)
Jeonwon Jeong of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18419715 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with multiple conductive patterns, insulation structures, and a vertical extension.
- The device includes a first conductive pattern on a substrate, a second conductive pattern surrounding and covering a lower portion of the first pattern, an upper insulation structure, and an upper conductive pattern penetrating through the insulation structure.
- The upper conductive pattern has a main plug portion overlapping the first and second conductive patterns vertically, and a vertical extension covering the upper sidewall of the first pattern and overlapping the second pattern.
- A dummy contact is formed on a single diffusion break region on the substrate.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Improved integration of conductive patterns - Enhanced vertical connectivity in circuits
Benefits: - Higher circuit density - Improved signal transmission - Enhanced overall performance
Commercial Applications: Title: Advanced Integrated Circuit Devices for Enhanced Performance This technology can be used in the development of high-performance electronic devices, leading to faster and more efficient products in various industries.
Questions about the technology: 1. How does the vertical extension in the upper conductive pattern improve circuit performance? The vertical extension allows for better coverage and connectivity within the circuit, enhancing signal transmission and overall efficiency.
2. What are the advantages of having a dummy contact on a single diffusion break region? The dummy contact helps to optimize the layout of the circuit and improve the overall functionality of the device.
Original Abstract Submitted
An integrated circuit device includes a first conductive pattern disposed on a substrate, a second conductive pattern surrounding a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulation structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern penetrating through the upper insulation structure and extending in a vertical direction, wherein the upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension extending from a portion of the main plug portion toward the substrate, covering an upper of the upper sidewall of the first conductive pattern, and overlapping the second conductive pattern in the vertical direction, and a dummy contact is formed on a single diffusion break region on the substrate.
