18419696. Semiconductor Devices and Methods of Manufacturing simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 Semiconductor Devices and Methods of Manufacturing
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Devices and Methods of Manufacturing - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Semiconductor Devices and Methods of Manufacturing
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jhon Jhy Liaw of Zhudong Township (TW)
Semiconductor Devices and Methods of Manufacturing - A simplified explanation of the abstract
This abstract first appeared for US patent application 18419696 titled 'Semiconductor Devices and Methods of Manufacturing
Simplified Explanation
The abstract describes a semiconductor device with gate all around (GAA) transistor structures and their manufacturing methods, utilizing different thicknesses in an epi-growth scheme to create vertically stacked nanostructure devices.
- Different thicknesses in epi-growth scheme
- Creation of vertically stacked nanostructure GAA devices
- Topmost nanostructure thicker than others in the stack
- Thickest LDD portion in the topmost nanostructure
Potential Applications
This technology could be applied in:
- Advanced semiconductor manufacturing
- High-performance computing
- Nanotechnology research
Problems Solved
This technology addresses:
- Improving transistor performance
- Enhancing device density
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased device performance
- Higher integration density
- Lower power consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor industry
- Electronics manufacturing
- Research and development companies
Possible Prior Art
One possible prior art could be the use of different thicknesses in semiconductor devices to enhance performance and efficiency. Another could be the development of vertically stacked nanostructure devices for advanced applications.
Unanswered Questions
How does this technology compare to existing transistor structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing transistor structures to evaluate the performance and efficiency improvements.
What are the specific manufacturing challenges associated with creating vertically stacked nanostructure GAA devices?
The article does not delve into the specific manufacturing challenges that may arise when producing vertically stacked nanostructure GAA devices.
Original Abstract Submitted
Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. Different thickness in an epi-growth scheme is adopted to create different sheet thicknesses within the same device channel regions for use in manufacturing vertically stacked nanostructure (e.g., nanosheet, nanowire, or the like) GAA devices. A GAA device may be formed with a vertical stack of nanostructures in a channel region with a topmost nanostructure of the vertical stack being thicker than the other nanostructures of the vertical stack. Furthermore, an LDD portion of the topmost nanostructure may be formed as the thickest of the nanostructures in the vertical stack.
