18419281. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)

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MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Takeyuki Suzuki of Kaga Ishikawa JP

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18419281 titled 'MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

Original Abstract Submitted

A manufacturing method for a semiconductor device according to an embodiment includes forming a first insulating layer on a ring-shaped convex area and a slope area of a semiconductor wafer which has a first surface and a second surface opposite to the first surface and has the ring-shaped convex area on a peripheral region of the first surface, a concave area on a central region of the first surface, and the slope area connecting the ring-shaped convex area and the concave area, providing a dicing tape on the semiconductor wafer on the first surface side, dividing the semiconductor wafer into a first member of the ring-shaped convex area and the slope area and a second member of the concave area by cutting the semiconductor wafer, and peeling off the first member of the ring-shaped area and the slope area from the dicing tape.