18418880. FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Katherine H. Chiang of New Taipei City (TW)

Chung-Te Lin of Tainan City (TW)

FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18418880 titled 'FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS

Simplified Explanation

A memory system is described in the patent application, which includes memory cells, word lines, bit lines, and source lines. The memory cells are arranged in rows and columns, with each cell having a gate, a drain, and a source. The word lines are connected to the gates of the memory cells in the corresponding row, while the bit lines and source lines are connected to the drain and source of the memory cells in the corresponding column, respectively. During a write operation, the selected memory cell's word line receives a first voltage, while the bit line and source line receive a second voltage, with one being positive and the other negative.

• Memory system with memory cells, word lines, bit lines, and source lines
• Memory cells arranged in rows and columns with gates, drains, and sources
• Word lines connected to gates, bit lines and source lines connected to drains and sources
• Write operation involves applying different voltages to word line, bit line, and source line

Potential Applications

- Data storage devices - Embedded systems - Mobile devices

Problems Solved

- Efficient memory operations - Reduced power consumption - Improved data retention

Benefits

- Faster write operations - Lower energy consumption - Enhanced memory performance

Possible Prior Art

No known prior art.

Unanswered Questions

How does this memory system compare to existing technologies in terms of speed and efficiency?

The article does not provide a direct comparison with existing technologies, making it difficult to assess the system's performance relative to others.

What are the potential limitations or drawbacks of implementing this memory system in practical applications?

The article does not address any potential limitations or drawbacks that may arise from implementing this memory system, leaving room for further investigation into its practical implications.

Original Abstract Submitted

A memory system including a plurality of memory cells, a plurality of word lines, a plurality of bit lines, and a plurality of source lines. The plurality of memory cells are arranged in rows and columns, each of the plurality of memory cells having a gate, a drain, and a source. In the plurality of word lines, each of the word lines having a corresponding row, wherein each of the word lines is coupled to the gates of the memory cells in the corresponding row. In the plurality of bit lines and the plurality of source lines, each of the bit lines and each of the source lines having a corresponding column, where each of the bit lines is connected to the drain of the memory cells in the corresponding column and each of the source lines is connected to the source of the memory cells in the corresponding column. Where, in a write operation, the word line corresponding to a selected memory cell is configured to receive a first voltage, and the bit line and the source line of the selected memory cell are configured to receive a second voltage, and where one of the first voltage or the second voltage is a positive voltage and the other of the first voltage or the second voltage is a negative voltage.