18418720. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Soodoo Chae of Seongnam-si (KR)

Myoungbum Lee of Seoul (KR)

HuiChang Moon of Yongin-si (KR)

Hansoo Kim of Suwon-si (KR)

JinGyun Kim of Yongin-si (KR)

Kihyun Kim of Hwaseong-si (KR)

Siyoung Choi of Seongnam-si (KR)

Hoosung Cho of Yongin-si (KR)

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18418720 titled 'NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The abstract describes a three-dimensional nonvolatile memory device and a method for fabricating the same, including a semiconductor substrate, active pillars, gate electrodes, and supporters.

• The semiconductor substrate has a memory cell region and a contact region.
• Active pillars extend perpendicularly to the semiconductor substrate in the memory cell region.
• Gate electrodes intersect the active pillars, extending from the memory cell region to the contact region and stacked on the substrate.
• Supporters extend perpendicularly in the contact region to penetrate one or more of the gate electrodes.

Potential Applications

The technology could be applied in:

• High-capacity storage devices
• Advanced computing systems
• Data centers

Problems Solved

This technology addresses:

• Increasing demand for high-density memory storage
• Need for faster and more reliable memory devices
• Space constraints in electronic devices

Benefits

The benefits of this technology include:

• Higher memory density
• Improved data access speeds
• Enhanced reliability and durability

Potential Commercial Applications

The technology could find commercial applications in:

• Consumer electronics
• Automotive systems
• Aerospace technology

Possible Prior Art

One possible prior art for this technology could be:

• Three-dimensional memory devices with similar structures and configurations.

How does this technology compare to traditional memory devices in terms of speed and reliability?

This technology offers faster data access speeds and improved reliability compared to traditional memory devices due to its three-dimensional structure and design.

What are the potential challenges in scaling up this technology for mass production?

Scaling up this technology for mass production may face challenges related to manufacturing processes, cost efficiency, and integration with existing systems.

Original Abstract Submitted

A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.