18418291. LASER ANNEALING DEVICE AND LASER ANNEALING METHOD simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
Contents
- 1 LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LASER ANNEALING DEVICE AND LASER ANNEALING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
Organization Name
Panasonic Intellectual Property Management Co., Ltd.
Inventor(s)
LASER ANNEALING DEVICE AND LASER ANNEALING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18418291 titled 'LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
Simplified Explanation
The laser annealing device irradiates an amorphous silicon film with a laser beam to perform an annealing process. The device includes multiple laser oscillators emitting laser beams with different wavelengths, a diffraction grating to diffract the laser beams, and a controller to control the emission of the laser beams from the oscillators. The controller can select specific oscillators based on the crystal grain size of the silicon film.
- Laser annealing device with multiple laser oscillators emitting beams of different wavelengths
- Diffraction grating to diffract the laser beams
- Controller to control emission of laser beams based on crystal grain size of silicon film
- Laser beams diffracted on the same optical axis
Potential Applications
The technology can be used in the semiconductor industry for annealing processes in the production of electronic devices.
Problems Solved
The technology solves the problem of efficiently annealing amorphous silicon films with different crystal grain sizes.
Benefits
The benefits of this technology include precise control over the annealing process, improved efficiency, and enhanced quality of the silicon films.
Potential Commercial Applications
Potential commercial applications include the manufacturing of solar panels, LCD displays, and other electronic devices requiring annealing processes.
Possible Prior Art
Prior art may include similar laser annealing devices used in the semiconductor industry for processing thin films.
Unanswered Questions
How does the controller determine which laser oscillators to activate based on the crystal grain size of the silicon film?
The controller likely uses feedback mechanisms or sensors to analyze the crystal grain size and select the appropriate laser oscillators for the annealing process.
Are there any limitations to the use of laser annealing for different types of materials besides amorphous silicon?
The article does not address the potential limitations of using laser annealing for materials other than amorphous silicon. Further research may be needed to explore the applicability of this technology to different materials.
Original Abstract Submitted
Laser annealing device () irradiates amorphous silicon film (W) with laser beam (Li) to perform an annealing process. The laser annealing device includes: a plurality of laser oscillators () that emit laser beams having mutually different wavelengths (λi); diffraction grating () that diffracts the laser beams emitted from the laser oscillators; and controller () that switches on and off states of emission of the laser beams by the laser oscillators. The laser oscillators are disposed at mutually different positions, and the laser beams emitted from the laser oscillators are diffracted on identical optical axis (A) by the diffraction grating. The controller can select at least one or more of the laser oscillators for turning on emission of the laser beams from among the plurality of laser oscillators in accordance with any crystal grain size of the amorphous silicon film.
