18417847. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18417847 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of a cell region on a cell substrate and a peripheral circuit region on a peripheral circuit board connected to the cell region in a bonding manner.
- The cell region includes multiple gate electrodes stacked on one side of the cell substrate, along with bypass and normal cell contact plugs extended vertically and connected to different gate electrodes.
- Metal wirings are used to electrically connect the cell contact plugs, with the second metal wiring connected to the fourth metal wiring through a bypass path consisting of bonding metal pairs.
Potential Applications: - This technology can be applied in various semiconductor memory devices, improving their performance and efficiency. - It can be utilized in the development of advanced electronic devices requiring high-speed data processing.
Problems Solved: - Enhances the connectivity and functionality of semiconductor memory devices. - Improves the overall performance and reliability of electronic devices.
Benefits: - Increased speed and efficiency in data processing. - Enhanced reliability and durability of semiconductor memory devices.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Speed Data Processing This technology can be commercially used in the production of high-performance electronic devices such as smartphones, computers, and servers, catering to the growing demand for faster data processing capabilities.
Prior Art: Readers can explore prior patents related to semiconductor memory devices, gate electrodes, and metal wirings to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly working on improving the design and functionality of semiconductor memory devices, incorporating new materials and techniques to enhance performance and efficiency.
Questions about Semiconductor Memory Devices: 1. How does the vertical extension of cell contact plugs improve the functionality of semiconductor memory devices? - The vertical extension of cell contact plugs allows for efficient connectivity between different components within the device, enhancing overall performance and reliability.
2. What role do metal wirings play in the operation of semiconductor memory devices? - Metal wirings are essential for establishing electrical connections between various components in the device, ensuring smooth data flow and functionality.
Original Abstract Submitted
A semiconductor memory device comprising a cell region on a cell substrate, and a peripheral circuit region on a peripheral circuit board connected to the cell region in a bonding manner is provided. Wherein the cell region comprises a plurality of gate electrodes sequentially stacked on a first side of the cell substrate, a first bypass cell contact plug extended in a vertical direction in an extended region connected to the first gate electrode, a normal cell contact plug extended in the vertical direction in the extended region and connected to the second gate electrode, a first metal wiring electrically connected to the first bypass cell contact plug and a second metal wiring on the first metal wiring and electrically connected to the first metal wiring, wherein the second metal wiring is connected with the fourth metal wiring through a first bypass path including a plurality of bonding metal pairs.
