18417830. THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
Contents
- 1 THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Thin Film Transistors
- 1.13 Original Abstract Submitted
THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES
Organization Name
Inventor(s)
Hernan A. Castro of Shingle Springs CA (US)
Stephen W. Russell of Boise ID (US)
Stephen H. Tang of Fremont CA (US)
THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18417830 titled 'THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES
Simplified Explanation
The patent application describes methods and apparatuses for thin film transistors and related fabrication techniques. These transistors can access multiple memory cells in a cross-point architecture, using patterns of vias to simplify the fabrication process.
- Thin film transistors accessing multiple memory cells
- Cross-point architecture for memory access
- Fabrication techniques using vias for simplified process
Key Features and Innovation
- Thin film transistors accessing two or more memory cell decks
- Cross-point architecture for memory access
- Fabrication techniques using vias for simplified process
- Different transistor configurations possible with various groups of vias
- Circuits and components of memory devices can be constructed using thin film transistors and via-based techniques
Potential Applications
The technology can be applied in the manufacturing of memory devices, particularly in building thin film transistors within composite stacks. It can also be used in constructing circuits and components for memory devices.
Problems Solved
The technology addresses the need for efficient and simplified fabrication techniques for thin film transistors and memory devices. By utilizing vias and cross-point architectures, the process can be streamlined with reduced processing steps.
Benefits
- Simplified fabrication process
- Efficient construction of thin film transistors
- Versatile configurations for different memory cell access
- Enhanced circuitry and component construction for memory devices
Commercial Applications
- Memory device manufacturing industry
- Semiconductor fabrication companies
- Electronics and technology sectors
Prior Art
Readers can explore prior patents related to thin film transistors, memory devices, and fabrication techniques in the semiconductor industry to gain a deeper understanding of the technology landscape.
Frequently Updated Research
Stay informed about the latest advancements in thin film transistor technology, memory device construction, and fabrication techniques in the semiconductor field to keep up with industry trends and innovations.
Questions about Thin Film Transistors
What are the main advantages of using thin film transistors in memory devices?
Thin film transistors offer benefits such as compact size, low power consumption, and high integration density, making them ideal for memory applications.
How do fabrication techniques using vias improve the efficiency of building thin film transistors?
Fabrication techniques utilizing vias at the top layer of a composite stack reduce the number of processing steps required, streamlining the construction process and enhancing efficiency.
Original Abstract Submitted
Methods and apparatuses for thin film transistors and related fabrication techniques are described. The thin film transistors may access two or more decks of memory cells disposed in a cross-point architecture. The fabrication techniques may use one or more patterns of vias formed at a top layer of a composite stack, which may facilitate building the thin film transistors within the composite stack while using a reduced number of processing steps. Different configurations of the thin film transistors may be built using the fabrication techniques by utilizing different groups of the vias. Further, circuits and components of a memory device (e.g., decoder circuitry, interconnects between aspects of one or more memory arrays) may be constructed using the thin film transistors as described herein along with related via-based fabrication techniques.
