18417325. MEMORY DEVICE WITH WORD LINE PULSE RECOVERY simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 MEMORY DEVICE WITH WORD LINE PULSE RECOVERY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE WITH WORD LINE PULSE RECOVERY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE WITH WORD LINE PULSE RECOVERY
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-jer Hsieh of Hsinchu City (TW)
Yu-Hao Hsu of Tainan City (TW)
Cheng Hung Lee of Hsinchu (TW)
MEMORY DEVICE WITH WORD LINE PULSE RECOVERY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18417325 titled 'MEMORY DEVICE WITH WORD LINE PULSE RECOVERY
Simplified Explanation
The memory device described in the abstract is designed to improve the performance of memory cells by utilizing tracking word lines and bit lines to enhance the write operation. Here are the key points of the innovation:
- The memory device includes memory cells, a word line, a tracking word line, and a tracking bit line.
- The word line provides a first pulse with a defined pulse width.
- The tracking word line provides a second pulse with a decreased rising edge slope.
- The tracking bit line, coupled to the tracking word line, increases the pulse width of the first pulse based on the characteristics of the second pulse.
Potential Applications
This technology could be applied in various memory devices such as DRAM, SRAM, and flash memory to improve write operation efficiency and speed.
Problems Solved
1. Enhanced performance of memory cells during write operations. 2. Improved reliability and stability of memory devices.
Benefits
1. Faster write operations in memory cells. 2. Increased efficiency and reliability of memory devices. 3. Potential for higher data transfer rates.
Potential Commercial Applications
"Enhanced Write Operation in Memory Devices" - Optimizing memory write operations for improved performance.
Possible Prior Art
One potential prior art could be the use of tracking circuits in memory devices to improve write operation efficiency. However, the specific implementation described in this patent application may be novel and inventive.
Unanswered Questions
How does this technology impact power consumption in memory devices?
The abstract does not provide information on the power consumption implications of this innovation. Further research or experimentation may be needed to determine the effect on power usage.
Are there any limitations to the scalability of this technology in different memory architectures?
It is unclear from the abstract whether this technology can be easily scaled and implemented in various memory architectures. Additional studies or testing may be required to assess its scalability across different memory systems.
Original Abstract Submitted
A memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse; a first tracking WL, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope; and a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.
