18416990. SEMICONDUCTOR MANUFACTURING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MANUFACTURING DEVICE
Organization Name
Inventor(s)
Hyeon Jin Jeon of Suwon-si (KR)
Hyeong Un Jeon of Suwon-si (KR)
SEMICONDUCTOR MANUFACTURING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18416990 titled 'SEMICONDUCTOR MANUFACTURING DEVICE
The semiconductor manufacturing device described in the abstract includes a support unit in a chamber, with a showerhead positioned between first and second plasma regions.
- The device has first and second gas supply units that inject different process gases into the second plasma region through the showerhead.
- The showerhead features plasma penetration portions that allow some of the plasma generated in the first plasma region to pass through.
- There are first gas flow paths for injecting the first process gas into a first zone of the showerhead, and second gas flow paths for injecting the second process gas into a second zone surrounding the first zone.
- The first and second cavities connected to the gas flow paths diffuse the process gases, with gas spraying holes facing the second plasma region.
Potential Applications:
- This technology can be used in the manufacturing of semiconductors to improve the efficiency and quality of the process.
- It can also be applied in other industries where plasma processing is required for precise material deposition or etching.
Problems Solved:
- The device addresses the need for controlled and uniform distribution of process gases in plasma processing, which is crucial for achieving consistent results in semiconductor manufacturing.
Benefits:
- Enhanced control over the plasma process leads to improved semiconductor device performance and reliability.
- The design of the device allows for more efficient use of process gases, reducing waste and operational costs.
Commercial Applications:
- This technology has significant commercial potential in the semiconductor industry, where precise plasma processing is essential for producing high-quality semiconductor devices.
Questions about the technology: 1. How does the diffusion of process gases through the cavities in the showerhead contribute to the effectiveness of the plasma processing? 2. What are the specific advantages of having plasma penetration portions in the showerhead for semiconductor manufacturing?
Original Abstract Submitted
A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.
