18415928. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)

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Integrated Assemblies and Methods of Forming Integrated Assemblies

Organization Name

Micron Technology, Inc.

Inventor(s)

Jordan D. Greenlee of Boise ID (US)

Alyssa N. Scarbrough of Boise ID (US)

John D. Hopkins of Meridian ID (US)

Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract

This abstract first appeared for US patent application 18415928 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies

Simplified Explanation

The integrated assembly described in the patent application includes channel-material-pillars, conductive posts, a source structure, a panel, doped-semiconductor-material, and rings made of insulative materials.

  • Channel-material-pillars and conductive posts are arranged within different regions of the assembly.
  • A source structure is coupled to lower regions of the channel-material-pillars.
  • A panel separates two memory-block-regions and is directly adjacent to doped-semiconductor-material.
  • Rings laterally surround lower regions of the conductive posts and include laminates of insulative materials.

Potential Applications

This technology could be applied in:

  • Memory devices
  • Semiconductor manufacturing
  • Integrated circuits

Problems Solved

This technology helps in:

  • Improving memory storage capacity
  • Enhancing semiconductor device performance
  • Increasing data processing speed

Benefits

The benefits of this technology include:

  • Higher memory density
  • Improved device reliability
  • Enhanced data processing efficiency

Potential Commercial Applications

Potential commercial applications of this technology could be in:

  • Consumer electronics
  • Data centers
  • Telecommunications industry

Possible Prior Art

One possible prior art for this technology could be:

  • Semiconductor device structures with similar arrangements of pillars and conductive posts.

Unanswered Questions

How does this technology compare to existing memory storage solutions in terms of speed and capacity?

This technology offers higher memory density and potentially faster data processing speeds compared to traditional memory storage solutions.

What are the potential challenges in scaling up the production of integrated assemblies using this technology?

One potential challenge could be optimizing the manufacturing process to ensure consistent quality and reliability in large-scale production.


Original Abstract Submitted

Some embodiments include an integrated assembly having a memory region and another region adjacent the memory region. Channel-material-pillars are arranged within the memory region, and conductive posts are arranged within said other region. A source structure is coupled to lower regions of the channel-material-pillars. A panel extends across the memory region and said other region, and separates a first memory-block-region from a second memory-block-region. Doped-semiconductor-material is directly adjacent to the panel within the memory region and the other region. Rings laterally surround lower regions of the conductive posts. The rings are between the conductive posts and the doped-semiconductor-material. The rings include laminates of two or more materials, with at least one of said two or more materials being insulative. Some embodiments include methods for forming integrated assemblies.