18415765. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jinbum Kim of Seoul (KR)

DAHYE Kim of Seoul (KR)

SEOKHOON Kim of Suwon-si (KR)

JAEMUN Kim of Seoul (KR)

Ilgyou Shin of Seoul (KR)

Haejun Yu of Osan-si (KR)

KYUNGIN Choi of Seoul (KR)

KIHYUN Hwang of Seongnam-si (KR)

SANGMOON Lee of Suwon-si (KR)

SEUNG HUN Lee of Hwaseong-si (KR)

KEUN HWI Cho of Seoul (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18415765 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a unique structure with stacked semiconductor patterns and source/drain patterns, as well as a gate electrode crossing the channel pattern.

• The device features an active pattern on a substrate, a pair of source/drain patterns, a channel pattern with stacked semiconductor patterns, and a gate electrode.
• One of the source/drain patterns includes a first semiconductor layer and a second semiconductor layer, with specific widths in the first direction.
• The second width of the second semiconductor layer is larger than the first width of the first semiconductor pattern and smaller than the third width of the second semiconductor layer.

Potential Applications

This semiconductor device could be used in:

• Advanced electronic devices
• High-performance computing systems
• Power management applications

Problems Solved

This technology helps address issues related to:

• Enhancing device performance
• Improving power efficiency
• Increasing integration density

Benefits

The benefits of this semiconductor device include:

• Higher speed and efficiency
• Better thermal management
• Increased reliability and longevity

Potential Commercial Applications

With its unique structure and performance benefits, this technology could be applied in:

• Smartphone processors
• Data center servers
• Automotive electronics

Possible Prior Art

One possible prior art could be the use of stacked semiconductor patterns in semiconductor devices for improved performance and efficiency.

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of power consumption?

The abstract does not provide specific information on power consumption comparisons with other semiconductor devices.

Are there any limitations to the scalability of this technology for future advancements in semiconductor manufacturing?

The abstract does not address potential scalability limitations for future advancements in semiconductor manufacturing processes.

Original Abstract Submitted

A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. One of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. The first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. The largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.