18414893. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Huijung Kim of Seongnam-si (KR)
Sungwon Yoo of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18414893 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of a first word line, a second word line, first and second semiconductor patterns, a cell capacitor, first and second bit lines, and a second bit line.
- The first word line runs vertically, while the second word line is horizontally spaced apart from the first word line and also extends vertically.
- The first semiconductor pattern forms a ring-shaped horizontal cross-section around the first word line and is part of a first cell transistor.
- The second semiconductor pattern forms a ring-shaped horizontal cross-section around the second word line and is part of a second cell transistor.
- A cell capacitor, with a first electrode, a second electrode, and a capacitor dielectric film, is situated between the first and second semiconductor patterns.
- The first bit line extends horizontally opposite the cell capacitor from the first semiconductor pattern, while the second bit line extends horizontally opposite the cell capacitor from the second semiconductor pattern.
Potential Applications: - This technology can be used in various semiconductor memory devices such as DRAMs (Dynamic Random Access Memory) and SRAMs (Static Random Access Memory).
Problems Solved: - This innovation addresses the need for efficient and compact memory devices with high storage capacity.
Benefits: - Improved performance and reliability of semiconductor memory devices. - Enhanced data storage capabilities in electronic devices.
Commercial Applications: - The technology can be applied in the manufacturing of consumer electronics, computer systems, and other digital devices to enhance memory storage and processing speed.
Questions about the technology: 1. How does this semiconductor memory device improve data storage efficiency compared to traditional memory devices? 2. What are the potential cost implications of implementing this technology in mass-produced electronic devices?
Original Abstract Submitted
A semiconductor memory device includes: a first word line extending in a vertical direction; a second word line spaced apart from the first word line in a first horizontal direction and extending in the vertical direction; a first semiconductor pattern of a ring-shaped horizontal cross-section surrounding the first word line and constituting a portion of a first cell transistor; a second semiconductor pattern of a ring-shaped horizontal cross-section surrounding the second word line and constituting a portion of a second cell transistor; a cell capacitor between the first semiconductor pattern and the second semiconductor pattern and including a first electrode, a second electrode, and a capacitor dielectric film; a first bit line opposite the cell capacitor with respect to the first semiconductor pattern and extending in a second horizontal direction; and a second bit line opposite the cell capacitor with respect to the second semiconductor pattern.
