18413716. Fin Field-Effect Transistor Device with Composite Liner for the Fin simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Fin Field-Effect Transistor Device with Composite Liner for the Fin
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Fin Field-Effect Transistor Device with Composite Liner for the Fin - A simplified explanation of the abstract
This abstract first appeared for US patent application 18413716 titled 'Fin Field-Effect Transistor Device with Composite Liner for the Fin
Simplified Explanation
The patent application describes a method of forming a semiconductor device, including the following steps:
- Forming a fin protruding above a substrate
- Forming a liner over the fin
- Performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, which comprises an oxide or a nitride of the liner
- Forming isolation regions on opposing sides of the fin after the surface treatment process
- Forming a gate dielectric over the conversion layer after forming the isolation regions
- Forming a gate electrode over the fin and over the gate dielectric
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as smartphones, computers, and other electronic devices.
Problems Solved: - This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the gate dielectric and gate electrode formation process.
Benefits: - Enhanced performance and efficiency of semiconductor devices - Improved reliability and durability of the devices
Potential Commercial Applications: - The technology can be utilized by semiconductor manufacturers to produce high-quality and high-performance electronic devices for consumer and industrial markets.
Possible Prior Art: - Prior art related to surface treatment processes for semiconductor devices and gate dielectric formation techniques may exist, but specific examples are not provided in the abstract.
Unanswered Questions: 1. What specific types of semiconductor devices can benefit the most from this method of formation? 2. Are there any limitations or challenges associated with the surface treatment process described in the patent application?
Original Abstract Submitted
A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on opposing sides of the fin after the surface treatment process; forming a gate dielectric over the conversion layer after forming the isolation regions; and forming a gate electrode over the fin and over the gate dielectric.
