18413059. THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE simplified abstract (SAMSUNG DISPLAY CO., LTD.)
Contents
- 1 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing thin-film transistor substrates in terms of performance and cost-effectiveness?
- 1.9.3 What specific materials and manufacturing processes are used to create the semiconductor layer and electrodes in this thin-film transistor substrate?
- 1.10 Original Abstract Submitted
THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
Organization Name
Inventor(s)
THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18413059 titled 'THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
Simplified Explanation
The patent application describes a thin-film transistor substrate with improved electrical characteristics, such as off-current characteristics, without adding more mask processes. The substrate includes a semiconductor layer with specific conductive regions and a first semiconductor region, a lower electrode overlapping the first semiconductor region, and an upper electrode overlapping the first semiconductor region with specific boundaries coinciding with the edges of the electrodes.
- Enhanced electrical characteristics of a thin-film transistor substrate
- Off-current characteristics improvement without additional mask processes
- Specific layout of semiconductor layer, lower electrode, and upper electrode
- Boundaries of semiconductor regions coincide with electrode edges
Potential Applications
The technology could be applied in various display apparatus, such as LCD screens, OLED displays, and electronic paper.
Problems Solved
The innovation addresses the issue of enhancing the electrical characteristics of thin-film transistor substrates without the need for extra mask processes, simplifying the manufacturing process.
Benefits
- Improved off-current characteristics
- Enhanced electrical performance
- Simplified manufacturing process
Potential Commercial Applications
- Display manufacturing industry
- Consumer electronics sector
- Semiconductor industry
Possible Prior Art
Prior art may include patents or publications related to thin-film transistor substrates with improved electrical characteristics or specific electrode layouts.
Unanswered Questions
How does this technology compare to existing thin-film transistor substrates in terms of performance and cost-effectiveness?
The article does not provide a direct comparison with existing technologies in the market. It would be beneficial to understand how this innovation stands out in terms of performance and cost.
What specific materials and manufacturing processes are used to create the semiconductor layer and electrodes in this thin-film transistor substrate?
The article does not delve into the specific materials and processes involved in manufacturing the substrate. Understanding these details could provide insights into the feasibility and scalability of the technology.
Original Abstract Submitted
Provided are a thin-film transistor substrate that has enhanced electrical characteristics, such as off-current characteristics of a thin-film transistor, without increasing the number of mask processes, a display apparatus, and a method of manufacturing the thin-film transistor substrate. The thin-film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; a lower electrode disposed on the semiconductor layer and at least partially overlapping the first semiconductor region; and an upper electrode disposed on the lower electrode and at least partially overlapping the first semiconductor region, a first boundary between the first semiconductor region and the first conductive region coincides with an edge of the upper electrode, and a second boundary between the first semiconductor region and the second conductive region coincides with an edge of the lower electrode or an edge of the upper electrode.
