18412173. FLUORINE INCORPORATION METHOD FOR NANOSHEET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 FLUORINE INCORPORATION METHOD FOR NANOSHEET
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FLUORINE INCORPORATION METHOD FOR NANOSHEET - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FLUORINE INCORPORATION METHOD FOR NANOSHEET
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Lung-Kun Chu of New Taipei City (TW)
Huang-Lin Chao of Hillsboro OR (US)
FLUORINE INCORPORATION METHOD FOR NANOSHEET - A simplified explanation of the abstract
This abstract first appeared for US patent application 18412173 titled 'FLUORINE INCORPORATION METHOD FOR NANOSHEET
Simplified Explanation
The method described in the abstract involves a series of steps to fabricate nanostructures for electronic devices.
- Forming a plurality of nanostructures over a substrate
- Etching the nanostructures to create recesses
- Creating source/drain regions in the recesses
- Removing some nanostructures while leaving others
- Depositing a gate dielectric over and around the remaining nanostructures
- Applying a protective material and performing a fluorine treatment
- Depositing conductive materials over the gate dielectric
Potential Applications
The technology described in this patent application could be used in the fabrication of advanced electronic devices such as transistors, sensors, and other nanoscale components.
Problems Solved
This method offers a way to create precise nanostructures with source/drain regions, gate dielectrics, and conductive materials, which are essential for the functionality of electronic devices.
Benefits
The benefits of this technology include improved performance, miniaturization, and efficiency of electronic devices due to the precise control and fabrication of nanostructures.
Potential Commercial Applications
- "Nanostructure Fabrication Method for Advanced Electronics"
Possible Prior Art
There may be prior art related to the fabrication of nanostructures for electronic devices using similar techniques, but specific examples are not provided in this abstract.
Unanswered Questions
How does this method compare to existing techniques for nanostructure fabrication?
This article does not provide a direct comparison to existing techniques for nanostructure fabrication.
What are the specific electronic devices that could benefit from this technology?
The abstract does not specify the exact electronic devices that could benefit from this technology.
Original Abstract Submitted
A method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form recesses; forming source/drain regions in the recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the plurality of nanostructures; depositing a gate dielectric over and around the second nanostructures; depositing a protective material over the gate dielectric; performing a fluorine treatment on the protective material; removing the protective material; depositing a first conductive material over the gate dielectric; and depositing a second conductive material over the first conductive
