18410190. EFUSE CELLS WITH BACKSIDE POWER RAILS (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
EFUSE CELLS WITH BACKSIDE POWER RAILS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
Meng-Sheng Chang of Hsinchu (TW)
EFUSE CELLS WITH BACKSIDE POWER RAILS
This abstract first appeared for US patent application 18410190 titled 'EFUSE CELLS WITH BACKSIDE POWER RAILS
Original Abstract Submitted
A memory device includes a memory cell having a transistor and a resistor coupled to each other, where the memory cell is on the first side, and the transistor further includes a plurality of first sub-transistors disposed in a first region of the substate. The memory device includes a plurality of second sub-transistors disposed in a second region of the substrate. The memory device further includes a first interconnect structure disposed on the second side. The first sub-transistors are each coupled to the first interconnect structure through a plurality of first via structures. The second sub-transistors are each coupled to the first interconnect structure through a plurality of second via structures and at least a third via structure, where the first via structures and the second via structures each have a first cross-sectional area, and the third via structure has a second cross-sectional area that is different from the first cross-sectional area.