18410031. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
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ETCHING METHOD AND PLASMA PROCESSING APPARATUS
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ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18410031 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
The abstract describes an etching method that involves providing a substrate with two regions, one containing a first material and the other containing a second material. The second region is etched through an opening in the first region, forming carbon-containing and metal-containing layers on the sidewall of the opening.
- Etching method for substrates with multiple regions
- Formation of carbon-containing and metal-containing layers during etching
- Use of plasma generated from a processing gas containing carbon-containing gas, metal halide gas, and halogen scavenging gas
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Precise etching of substrates with multiple regions - Formation of specific layers during etching process
Benefits: - Enhanced control over etching process - Improved precision in substrate processing - Potential for new material combinations in device fabrication
Commercial Applications: Title: Advanced Etching Method for Semiconductor Manufacturing This technology could be used in the production of advanced semiconductor devices, leading to improved performance and efficiency in electronic products. The market implications include faster processing speeds, higher device densities, and increased functionality in microelectronics.
Questions about the technology: 1. How does the etching method described in the patent application differ from traditional etching techniques?
- The method involves the formation of specific layers during the etching process, allowing for more precise control over the substrate processing.
2. What are the potential advantages of using a halogen scavenging gas in the etching process?
- The halogen scavenging gas helps to remove halogen residues, reducing contamination and improving the quality of the etched layers.
Original Abstract Submitted
An etching method includes providing a substrate including a first region and a second region below the first region, the first region containing a first material and having an opening, and the second region containing a second material different from the first material, and etching the second region through the opening while forming a carbon-containing layer and a metal-containing layer below the carbon-containing layer on a sidewall of the opening, by supplying, onto the substrate, plasma generated from a processing gas containing a carbon-containing gas, a metal halide gas, and a halogen scavenging gas that scavenges halogen.
