18410016. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Lin-Yu Huang of Hsinchu (TW)

Sheng-Tsung Wang of Hsinchu (TW)

Jia-Chuan You of Taoyuan City (TW)

Chia-Hao Chang of Hsinchu City (TW)

Tien-Lu Lin of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Baoshan Township (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18410016 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes a gate stack, a source/drain structure, and a contact structure with specific sidewall angles.

• The semiconductor device structure includes a substrate, a gate stack, a source/drain structure, and a contact structure.
• The contact structure has a first sidewall that slopes downwardly and forms an angle smaller than 89.5° with the bottom surface.

Potential Applications

This technology could be applied in the development of advanced semiconductor devices, such as transistors, integrated circuits, and other electronic components.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the contact structure design, which can enhance electrical conductivity and reduce resistance.

Benefits

The benefits of this technology include increased device performance, improved reliability, and potentially lower power consumption in semiconductor devices.

Potential Commercial Applications

Potential commercial applications of this technology could include the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.

Possible Prior Art

One possible prior art could be the use of different contact structure designs in semiconductor devices to improve electrical characteristics and performance.

How does this technology compare to existing contact structure designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing contact structure designs to evaluate the performance and efficiency improvements achieved by the new design.

What specific manufacturing processes are required to implement this contact structure design in semiconductor devices?

The article does not detail the specific manufacturing processes or techniques needed to fabricate the contact structure with the described sidewall angles in semiconductor devices.

Original Abstract Submitted

Semiconductor device structures and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack formed over the substrate. The semiconductor device structure further includes a source/drain structure formed adjacent to the gate stack and a contact structure vertically overlapping the source/drain structure. In addition, the contact structure has a first sidewall slopes downwardly from its top surface to its bottom surface, and an angle between the first sidewall and a bottom surface of the contact structure is smaller than 89.5°.