18409413. LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract (MICRON TECHNOLOGY, INC.)

LOW RESISTANCE CROSSPOINT ARCHITECTURE

Organization Name

MICRON TECHNOLOGY, INC.

Inventor(s)

Rajasekhar Venigalla of Boise ID (US)

Patrick M. Flynn of Boise ID (US)

Josiah Jebaraj Johnley Muthuraj of Meridian ID (US)

Efe Sinan Ege of Boise ID (US)

Kevin Lee Baker of Boise ID (US)

Tao Nguyen of Boise ID (US)

Davis Weymann of Boise ID (US)

LOW RESISTANCE CROSSPOINT ARCHITECTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18409413 titled 'LOW RESISTANCE CROSSPOINT ARCHITECTURE

Simplified Explanation: The patent application describes methods, systems, and devices for a low resistance crosspoint architecture in memory devices.

• A manufacturing system deposits a thermal barrier material and a first layer of conductive material on a layered assembly containing electrode and memory materials.
• The system etches a gap in the layered assembly to create a space in the conductive material, thermal barrier material, memory material, and electrode materials.
• A second conductive material is deposited to form a conductive via in the gap, extending above the thermal barrier material.

Key Features and Innovation:

• Low resistance crosspoint architecture for memory devices.
• Use of thermal barrier material to enhance performance.
• Formation of conductive vias to improve connectivity.

Potential Applications:

• Memory devices in electronic systems.
• High-speed data storage applications.
• Advanced computing technologies.

Problems Solved:

• High resistance in crosspoint architectures.
• Inefficient connectivity in memory devices.
• Performance limitations in electronic systems.

Benefits:

• Improved data transfer speeds.
• Enhanced memory device performance.
• Increased efficiency in electronic systems.

Commercial Applications: The technology can be utilized in the development of high-performance memory devices for various electronic applications, potentially impacting industries such as data storage, computing, and telecommunications.

Prior Art: Readers can explore prior research on low resistance crosspoint architectures in memory devices to understand the evolution of this technology.

Frequently Updated Research: Stay informed about the latest advancements in low resistance crosspoint architectures and memory device technologies to remain at the forefront of innovation.

Questions about Low Resistance Crosspoint Architecture: 1. What are the primary advantages of using a low resistance crosspoint architecture in memory devices? 2. How does the integration of a thermal barrier material contribute to the performance of the architecture?

Original Abstract Submitted

Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.