18409150. MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Takahiko Ishizu of Sagamihara (JP)
MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18409150 titled 'MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Simplified Explanation:
This patent application describes a memory device that has a shortened access time for data reading. The device consists of two layers, with the first layer containing a reading circuit and the second layer containing two memory cells. The reading circuit includes a Si transistor, while each memory cell includes an OS transistor. The reading circuit compares the current amounts of the first and second currents flowing to the memory cells to read the data stored in them.
- The memory device has a first layer with a reading circuit and a second layer with two memory cells.
- The reading circuit includes a Si transistor, while each memory cell has an OS transistor.
- The reading circuit compares the current amounts of the first and second currents to read the data stored in the memory cells.
Potential Applications:
This technology could be used in various electronic devices such as smartphones, tablets, and computers to improve data reading speed and efficiency.
Problems Solved:
This technology addresses the issue of slow access times in memory devices, allowing for faster data reading and improved overall performance.
Benefits:
The benefits of this technology include enhanced data reading speed, improved efficiency, and better performance in electronic devices.
Commercial Applications:
Title: "Enhanced Memory Device for Faster Data Reading"
This technology could have commercial applications in the consumer electronics industry, specifically in the development of faster and more efficient devices such as smartphones, tablets, and computers. The market implications include increased demand for devices with improved memory performance.
Prior Art:
Readers interested in prior art related to this technology could start by researching patents and publications in the field of memory devices, particularly focusing on innovations in data reading speed and efficiency.
Frequently Updated Research:
Researchers in the field of memory devices are constantly working on improving data reading speed and efficiency, so staying updated on the latest advancements in this area is crucial for understanding the current state of the technology.
Questions about Memory Devices: 1. How does the use of Si transistors in the reading circuit impact the performance of the memory device? 2. What are the potential limitations of using OS transistors in memory cells, and how do they affect the overall functionality of the device?
Original Abstract Submitted
A memory device with shortened access time in data reading is provided. The memory device includes a first layer and a second layer positioned above the first layer, the first layer includes a reading circuit, and the second layer includes a first memory cell and a second memory cell. The reading circuit includes a Si transistor. The first memory cell and the second memory cell each include an OS transistor. The first memory cell is electrically connected to the reading circuit, and the second memory cell is electrically connected to the reading circuit. When a first current corresponding to first data retained in the first memory cell flows from the reading circuit to the first memory cell and a second current corresponding to second data retained in the second memory cell flows from the reading circuit to the second memory cell, the reading circuit compares the current amounts of the first current and the second current, and reads the first data.
