18408506. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ming-Fa Chen of Taichung City (TW)

Sung-Feng Yeh of Taipei City (TW)

Tzuan-Horng Liu of Taoyuan City (TW)

Chao-Wen Shih of Hsinchu County (TW)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18408506 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

The semiconductor structure described in the patent application includes a first semiconductor substrate, a first interconnect structure below the substrate, a through substrate via (TSV) penetrating through the substrate and extending into the interconnect structure, and a first bonding conductor below the interconnect structure electrically coupled to the TSV.

  • The TSV has a first surface in the interconnect structure and a second surface opposite to it.
  • The first bonding conductor has a bonding surface facing away from the interconnect structure.
  • The boundary of the bonding surface of the first bonding conductor overlaps with the boundary of the first surface of the TSV.

Potential Applications: - This technology can be applied in the semiconductor industry for advanced integrated circuits. - It can be used in high-performance computing systems and data centers.

Problems Solved: - Enhances electrical connectivity in semiconductor structures. - Improves signal transmission efficiency in integrated circuits.

Benefits: - Increased performance and reliability of semiconductor devices. - Enables higher data processing speeds in electronic systems.

Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance This technology can be utilized in the production of high-speed processors, memory chips, and other electronic components for various industries such as telecommunications, automotive, and consumer electronics.

Questions about the Technology: 1. How does the overlap of boundaries between the bonding conductor and TSV surfaces improve electrical connectivity? 2. What are the specific advantages of using through substrate vias in semiconductor structures?


Original Abstract Submitted

A semiconductor structure includes a first semiconductor substrate, a first interconnect structure disposed below the first semiconductor substrate, a through substrate via (TSV) penetrating through the first semiconductor substrate and extending into the first interconnect structure, and a first bonding conductor disposed below the first interconnect structure and electrically coupled to the TSV through the first interconnect structure. The TSV includes a first surface in the first interconnect structure and a second surface opposite to the first surface, and the first bonding conductor includes a first bonding surface facing away the first interconnect structure. In a view, a boundary of the first bonding surface of the first bonding conductor overlaps a boundary of the first surface of the TSV.

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