18407366. SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES simplified abstract (Micron Technology, Inc.)

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SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES

Organization Name

Micron Technology, Inc.

Inventor(s)

Gianluca Nicosia of Boise ID (US)

Akira Goda of Tokyo (JP)

Niccolo Righetti of Boise ID (US)

SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18407366 titled 'SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES

Simplified Explanation:

This patent application describes a memory sub-system that includes a memory device with multiple cells, each cell containing a set of cells. A processing device is connected to the memory device and is responsible for determining the level information associated with the set of cells, identifying a read level offset for a target cell within the set of cells, and executing a read operation based on the read level offset.

  • The memory sub-system includes a memory device with multiple cells.
  • Each cell contains a set of cells.
  • A processing device is connected to the memory device.
  • The processing device determines level information for the set of cells.
  • It identifies a read level offset for a target cell within the set of cells.
  • The processing device then performs a read operation based on the read level offset.

Key Features and Innovation:

  • Memory sub-system with multiple cells and sets of cells.
  • Processing device for determining level information and read level offset.
  • Efficient read operations based on the identified read level offset.

Potential Applications:

  • Data storage systems.
  • Computer memory modules.
  • Embedded systems.

Problems Solved:

  • Improving read operation efficiency.
  • Enhancing memory sub-system performance.

Benefits:

  • Faster read operations.
  • Optimal memory utilization.
  • Enhanced overall system performance.

Commercial Applications:

  • Data centers.
  • Cloud computing services.
  • Consumer electronics.

Prior Art:

Prior art related to this technology may include research on memory sub-systems, data storage systems, and processing devices in the field of computer engineering.

Frequently Updated Research:

Research on memory sub-system optimization, data storage efficiency, and processing device advancements may be relevant to this technology.

Questions about Memory Sub-System Technology:

1. How does the processing device determine the level information associated with the set of cells? 2. What are the potential implications of using this memory sub-system in data centers?


Original Abstract Submitted

A memory sub-system with a memory device having a plurality of cells, and the plurality of cells having a set of cells, and a processing device operatively coupled to the memory device, the processing device to perform operations of determining a level information associated with the set of cells, where the set of cells comprise a target cell associated with a read operation, identifying a read level offset for the target cell based on the level information, and performing the read operation in accordance with the read level offset.