18406745. THREE-DIMENSIONAL MEMORY DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICES
THREE-DIMENSIONAL MEMORY DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sheng-Chen Wang of Hsinchu (TW)
Feng-Cheng Yang of Zhudong Township (TW)
Chung-Te Lin of Tainan City (TW)
THREE-DIMENSIONAL MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18406745 titled 'THREE-DIMENSIONAL MEMORY DEVICES
Simplified Explanation
The device described in the abstract includes a word line, data storage layer, channel layer, back gate isolator, and a bit line with main and extension regions.
- Word line: Extends in a first direction.
- Data storage layer: Located on a sidewall of the word line.
- Channel layer: Positioned on a sidewall of the data storage layer.
- Back gate isolator: Found on a sidewall of the channel layer.
- Bit line: Consists of a main region and an extension region, with the main region contacting the channel layer and the extension region separated from the channel layer by the back gate isolator. The bit line extends in a second direction perpendicular to the first direction.
Potential Applications
This technology could be applied in:
- Memory devices
- Semiconductor manufacturing
- Data storage systems
Problems Solved
This innovation helps address issues related to:
- Increasing data storage capacity
- Enhancing memory device performance
- Improving semiconductor manufacturing processes
Benefits
The benefits of this technology include:
- Higher data storage density
- Faster data access speeds
- Enhanced overall device efficiency
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Next-generation solid-state drives
- Advanced computer memory modules
- High-performance data processing systems
Possible Prior Art
There may be prior art related to:
- Memory device structures
- Semiconductor manufacturing techniques
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing memory device structures. Further research or testing may be needed to determine the specific advantages of this innovation over current solutions.
What are the potential challenges or limitations of implementing this technology on a larger scale in commercial applications?
The article does not address the scalability or practicality of implementing this technology on a larger scale for commercial use. Additional studies or pilot projects may be necessary to assess the feasibility of mass production and integration into existing systems.
Original Abstract Submitted
In an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.
