18406454. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyun Geun Choi of Suwon-si (KR)
Seok Han Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18406454 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes various components such as a peri-gate structure, bonding pads, shielding conductive patterns, bit lines, active patterns, word lines, and data storage patterns.
- Peri-gate structure on a substrate
- First bonding pad on the peri-gate structure
- Shielding conductive pattern on the first bonding pad
- Second bonding pad between the shielding conductive pattern and the first bonding pad
- Bit line on the shielding conductive pattern extending in a first direction
- Active pattern on the bit line with lower and upper surfaces, along with side walls
- Word line on the first side wall of the active pattern
- Data storage pattern on the active pattern connected to the upper surface
Potential Applications: - Memory devices - Integrated circuits - Electronic devices
Problems Solved: - Efficient data storage - Improved memory device performance - Enhanced connectivity between components
Benefits: - Higher data storage capacity - Faster data access speeds - Enhanced overall device functionality
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be utilized in various commercial applications such as smartphones, computers, tablets, and other electronic devices to improve memory performance and storage capacity.
Questions about the technology: 1. How does the active pattern contribute to the functionality of the memory device? 2. What advantages does the shielding conductive pattern provide in terms of data storage and device performance?
Original Abstract Submitted
A semiconductor memory device includes a peri-gate structure on a substrate, a first bonding pad on the peri-gate structure, a shielding conductive pattern on the first bonding pad, a second bonding pad between the shielding conductive pattern and the first bonding pad and contacting the first bonding pad, a bit line on the shielding conductive pattern extending in a first direction, an active pattern on the bit line and including a lower surface and an upper surface, and a first side wall and a second side wall opposite to each other in the first direction, the lower surface of the active pattern being connected to the bit line, a word line on the first side wall of the active pattern, and extends in a third direction, and a data storage pattern on the active pattern, and is connected to the upper surface of the active pattern.
