18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)
Contents
- 1 METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE - A simplified explanation of the abstract
- 1.4 Original Abstract Submitted
METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE
Organization Name
Inventor(s)
Christian Huber of Ludwigsburg (DE)
Stefan Regensburger of Renningen (DE)
METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18405418 titled 'METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE
The abstract describes a method for producing a vertical semiconductor device, such as a transistor, using a semiconductor layer structure based on gallium nitride and multiple vertically arranged electrodes.
- The method involves forming the semiconductor layer structure on a substrate, potentially a foreign substrate.
- Laser radiation is introduced into the semiconductor layer structure or substrate, with a wavelength greater than the optical band gap of gallium nitride.
- The laser radiation causes the substrate to separate from at least part of the semiconductor layer structure.
Potential Applications: - This technology can be used in the production of high-performance vertical semiconductor devices, particularly transistors. - It may find applications in various electronic devices requiring efficient and reliable semiconductor components.
Problems Solved: - The method addresses the challenge of producing vertical semiconductor devices with precise layer structures and electrode arrangements. - It enables the separation of substrates from semiconductor layers without damaging the device.
Benefits: - Improved efficiency and performance of vertical semiconductor devices. - Enhanced reliability and stability of the semiconductor layer structure. - Cost-effective production process for high-quality semiconductor devices.
Commercial Applications: Title: "Innovative Method for Vertical Semiconductor Device Production" This technology could be utilized in the manufacturing of advanced electronic devices, leading to improved performance and reliability. It may have significant implications in industries such as telecommunications, computing, and power electronics.
Questions about Vertical Semiconductor Device Production: 1. How does the introduction of laser radiation aid in separating the substrate from the semiconductor layer structure?
Laser radiation with a wavelength greater than the optical band gap of gallium nitride enables a controlled separation process by inducing specific reactions at the interface between the substrate and the semiconductor layers.
2. What are the key advantages of using gallium nitride in the semiconductor layer structure for vertical devices?
Gallium nitride offers high electron mobility, thermal stability, and wide bandgap properties, making it ideal for high-frequency and high-power applications in vertical semiconductor devices.
Original Abstract Submitted
A method for producing a vertical semiconductor device, in particular a transistor. The device has a semiconductor layer structure for forming a semiconductor device based on gallium nitride and at least two, preferably three, electrodes arranged vertically one above the other, wherein the semiconductor layer structure is applied, in particular grown, on a substrate. The method includes forming a semiconductor layer structure comprising at least one layer based on gallium nitride on the substrate, in particular a foreign substrate. The method includes the introduction of laser radiation into the semiconductor layer structure or the substrate, wherein the wavelength of the laser radiation is greater than the optical band gap of gallium nitride, so that the laser radiation causes at least the substrate to separate from at least part of the semiconductor layer structure.
