18405049. ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
Contents
ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18405049 titled 'ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES
Simplified Explanation: This patent application describes a semiconductor device with multiple stacks of memory cells, each connected to a bitline and a wordline. It also includes capacitors between memory cell stacks and a power supply line connected to the capacitors.
- The semiconductor device has multiple stacks of memory cells within the substrate.
- Each stack includes a conductive string connecting memory cells to a bitline.
- Capacitors are placed between adjacent memory cell stacks.
- The capacitors have inner and outer conductive layers separated by a dielectric layer.
- A power supply line is connected to the capacitors at the base.
Key Features and Innovation: - Stacks of memory cells with conductive strings. - Capacitors between memory cell stacks with inner and outer conductive layers. - Power supply line connected to capacitors.
Potential Applications: - Memory storage devices. - Semiconductor manufacturing. - Integrated circuits.
Problems Solved: - Efficient memory cell connectivity. - Improved capacitor design. - Enhanced power supply connection.
Benefits: - Higher memory storage capacity. - Faster data access. - More reliable semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Data Storage This technology can be used in: - Consumer electronics. - Data centers. - Automotive electronics.
Prior Art: Prior art related to this technology can be found in patents and research papers on semiconductor memory devices, capacitor design, and power supply connections in integrated circuits.
Frequently Updated Research: Research on semiconductor memory devices, capacitor technology, and power supply connections in integrated circuits is continually evolving. Stay updated on the latest advancements in these areas for potential improvements in this technology.
Questions about Semiconductor Memory Devices: 1. What are the key components of a semiconductor memory device? - A semiconductor memory device typically includes memory cells, conductive strings, capacitors, and power supply lines. 2. How does the design of capacitors impact the performance of a semiconductor memory device? - The design of capacitors, such as the arrangement of conductive layers and dielectric materials, can affect the storage capacity and efficiency of a semiconductor memory device.
Original Abstract Submitted
A semiconductor device can include a substrate of semiconductor material and multiple stacks of memory cells disposed within the substrate. Each of the stacks can include a conductive string that connects memory cells to a bitline where each memory cell is located at an intersection of the conductive string and a wordline. The device can also include capacitor having a cylindrical body disposed between two adjacent stacks of memory cells where the capacitor includes an inner conductive layer and an outer conductive layer at least partially surrounding the inner conductive layer, where the inner conductive layer and the outer conductive layer are separated by a dielectric layer. The device can further include a power supply line conductively connected to an end of the capacitor at a base of the cylindrical body.
