18405040. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Chuan Chiu of Hsinchu (TW)

Jia-Chuan You of Taoyuan City (TW)

Chia-Hao Chang of Hsinchu City (TW)

Chun-Yuan Chen of HsinChu (TW)

Tien-Lu Lin of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Baoshan Township, Hsinchu County (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18405040 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes a substrate, a conductive feature, and an electrical connection structure. The electrical connection structure consists of a first grain made of a first metal material and a first inhibition layer made of a second metal layer different from the first metal material.

• The semiconductor device structure includes a substrate, conductive feature, and electrical connection structure.
• The electrical connection structure comprises a first grain made of a first metal material and a first inhibition layer made of a second metal layer.
• The first inhibition layer extends vertically along a side of a grain boundary and laterally along the bottom of the grain boundary.

Potential Applications

The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps improve the reliability and performance of semiconductor devices by enhancing the electrical connections between different components on the substrate.

Benefits

The benefits of this technology include increased conductivity, reduced resistance, and improved overall efficiency of semiconductor devices.

Potential Commercial Applications

The technology could have commercial applications in the electronics industry for manufacturing advanced semiconductor devices with enhanced performance and reliability.

Possible Prior Art

One possible prior art could be the use of different metal layers in semiconductor device structures to improve electrical connections and performance.

What are the specific materials used in the first grain and first inhibition layer in the semiconductor device structure described in the patent application?

The specific materials used in the first grain are a first metal material, while the first inhibition layer is made of a second metal layer that is different from the first metal material.

How does the first inhibition layer contribute to the overall performance of the semiconductor device structure?

The first inhibition layer extends vertically along a side of a grain boundary and laterally along the bottom of the grain boundary, helping to enhance the electrical connection and conductivity within the semiconductor device structure.

Original Abstract Submitted

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.