18404538. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Hidetoshi Ishibashi of Tokyo (JP)

Yasutaka Shimizu of Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18404538 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation: The semiconductor device described in the patent application prevents TIM pumping out while maintaining productivity by utilizing a heat dissipation surface with attached heat dissipation fins and a wire bonded to the surface. The protrusion of the wire from the surface is controlled within a specific range to optimize heat dissipation.

  • The semiconductor device includes a heat dissipation surface with attached heat dissipation fins.
  • A wire is bonded to the heat dissipation surface at least at one location.
  • The protrusion of the wire from the surface is controlled between 10 μm and 200 μm.
  • Heat dissipation fins are attached to the surface via the wire and a TIM material.

Potential Applications: 1. Electronic devices requiring efficient heat dissipation. 2. High-performance computing systems. 3. Automotive electronics. 4. Aerospace applications.

Problems Solved: 1. Prevents TIM pumping out in semiconductor devices. 2. Maintains productivity by optimizing heat dissipation. 3. Ensures stable performance in high-temperature environments.

Benefits: 1. Improved thermal management. 2. Enhanced reliability of semiconductor devices. 3. Increased lifespan of electronic components. 4. Consistent performance under heavy workloads.

Commercial Applications: The technology can be applied in the manufacturing of electronic devices such as smartphones, laptops, servers, and automotive control units. It can also benefit industries requiring high-performance computing solutions.

Questions about Semiconductor Device Heat Dissipation: 1. How does the protrusion of the wire from the heat dissipation surface impact heat dissipation efficiency? 2. What are the potential challenges in implementing this technology in mass-produced electronic devices?


Original Abstract Submitted

Provided is a semiconductor device that can prevent TIM pumping out while suppressing a decline in productivity. A semiconductor device includes a heat dissipation surface to which heat dissipation fins are attached, and a heat dissipation surface wire bonded to at least one location on the heat dissipation surface. An amount of protrusion of the heat dissipation surface wire from the heat dissipation surface is 10 μm or more and 200 μm or less. The heat dissipation fins are attached to the heat dissipation surface of the semiconductor device via the heat dissipation surface wire and a TIM, which is a thermal interface material.