18404178. DEVICE OVER PHOTODETECTOR PIXEL SENSOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 DEVICE OVER PHOTODETECTOR PIXEL SENSOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DEVICE OVER PHOTODETECTOR PIXEL SENSOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DEVICE OVER PHOTODETECTOR PIXEL SENSOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jhy-Jyi Sze of Hsin-Chu City (TW)
Dun-Nian Yaung of Taipei City (TW)
Alexander Kalnitsky of San Francisco CA (US)
DEVICE OVER PHOTODETECTOR PIXEL SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18404178 titled 'DEVICE OVER PHOTODETECTOR PIXEL SENSOR
Simplified Explanation
The present application is directed towards a semiconductor-on-insulator (SOI) DoP image sensor and a method for forming the SOI DoP image sensor.
- Semiconductor substrate with a floating node and a collector region
- Photodetector defined in part by the collector region
- Transfer transistor over the semiconductor substrate
- Semiconductor mesa over and spaced from the semiconductor substrate
- Readout transistor on and partially defined by the semiconductor mesa
- Via extending from the floating node to a gate electrode of the readout transistor
Potential Applications
The technology can be applied in:
- Digital cameras
- Smartphones
- Surveillance systems
- Medical imaging devices
Problems Solved
- Improved image quality
- Reduced noise in images
- Enhanced sensitivity to light
Benefits
- Higher performance in low-light conditions
- Lower power consumption
- Compact size for integration into small devices
Potential Commercial Applications
Optimizing SOI DoP image sensors for:
- Consumer electronics
- Automotive cameras
- Security cameras
- Medical imaging equipment
Possible Prior Art
One possible prior art could be the development of traditional image sensors with similar functionalities but without the specific features of the SOI DoP image sensor.
Unanswered Questions
How does the technology compare to traditional image sensors in terms of cost?
The article does not provide information on the cost comparison between the SOI DoP image sensor and traditional image sensors.
What is the expected lifespan of the SOI DoP image sensor compared to other image sensors?
The article does not mention the expected lifespan of the SOI DoP image sensor in comparison to other image sensors.
Original Abstract Submitted
Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) DoP image sensor and a method for forming the SOI DoP image sensor. In some embodiments, a semiconductor substrate comprises a floating node and a collector region. A photodetector is in the semiconductor substrate and is defined in part by a collector region. A transfer transistor is over the semiconductor substrate. The collector region and the floating node respectively define source/drain regions of the transfer transistor. A semiconductor mesa is over and spaced from the semiconductor substrate. A readout transistor is on and partially defined by the semiconductor mesa. The semiconductor mesa is between the readout transistor and the semiconductor substrate. A via extends from the floating node to a gate electrode of the readout transistor.
