18403990. METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR simplified abstract (Robert Bosch GmbH)
Contents
METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR
Organization Name
Inventor(s)
Jens Baringhaus of Sindelfingen (DE)
Klaus Heyers of Reutlingen (DE)
METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18403990 titled 'METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR
The method described in the abstract involves producing a field-effect transistor by modifying the surface layer of a starting material to reduce the width of the fins between gate trenches.
- Starting material includes gate trenches with fins formed between them
- Surface layer of the material is modified to include side surface layers on the fins facing the gate trenches
- Part of the modified surface layer is removed to reduce the width of the fins
Potential Applications: - Semiconductor industry for manufacturing field-effect transistors - Electronics industry for improving transistor performance
Problems Solved: - Enhances the efficiency and performance of field-effect transistors - Allows for precise control over the width of the fins
Benefits: - Improved transistor functionality - Enhanced overall device performance
Commercial Applications: - Production of high-performance electronic devices - Integration into various electronic systems for improved functionality
Questions about the technology: 1. How does modifying the surface layer of the starting material impact the performance of the field-effect transistor? 2. What specific advantages does reducing the width of the fins provide in transistor design?
Original Abstract Submitted
A method for producing a field-effect transistor. The method includes: providing a starting material including: a plurality of gate trenches, wherein a fin is formed between respectively two gate trenches; modifying at least a part of a surface layer of the starting material, wherein the part of the surface layer includes side surface layers on side surfaces of the fins, which side surfaces face the gate trenches, in order to obtain a modified surface layer; and at least partially removing at least a part of the modified surface layer in such a way that a width of the fins is reduced.
