18403115. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18403115 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
The semiconductor memory device described in the abstract consists of multiple word line layers, insulating layers, a channel structure, and a bit line on a semiconductor substrate.
- The word line layers have a meandering shape, with each layer containing an insulating line and a word line.
- The insulating layers separate the word line layers vertically on the semiconductor substrate.
- The channel structure includes a channel region and a gate dielectric layer surrounding it.
- The bit line extends in a horizontal direction perpendicular to the vertical direction and is connected to the channel structure.
Potential Applications: This technology can be used in various memory storage devices such as flash drives, solid-state drives, and other electronic devices requiring non-volatile memory.
Problems Solved: This innovation addresses the need for efficient and compact memory storage solutions by optimizing the layout of word line layers and insulating layers.
Benefits: The meandering shape of the word line layers allows for increased memory storage capacity in a smaller physical footprint, enhancing the overall performance of semiconductor memory devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry for the development of high-density memory storage solutions, leading to improved efficiency and performance in electronic devices.
Questions about the technology: 1. How does the meandering shape of the word line layers contribute to the efficiency of the semiconductor memory device? 2. What are the specific advantages of using multiple word line layers in memory storage devices?
Frequently Updated Research: Researchers are continually exploring new materials and designs to further enhance the performance and capacity of semiconductor memory devices. Stay updated on the latest advancements in this field for potential future applications.
Original Abstract Submitted
A semiconductor memory device includes a semiconductor substrate; a plurality of word line layers on the semiconductor substrate, each word line layer of the plurality of word line layers including an insulating line and a word line; a plurality of insulating layers in spaces between the plurality of word line layers, the plurality of insulating layers being apart from each other in a vertical direction on the semiconductor substrate; a channel structure extending in the vertical direction on the semiconductor substrate, the channel structure including a channel region and a gate dielectric layer surrounding the channel region; and a bit line on the channel structure, the bit line extending in a first horizontal direction perpendicular to the vertical direction and being connected to the channel structure, wherein the word line of each word line layer of the plurality of word line layers has a meandering shape.
