18402852. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Shunpei Yamazaki of Tokyo (JP)
Masami Jintyou of Shimotsuga (JP)
Yukinori Shima of Tatebayashi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402852 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The method described in the patent application involves manufacturing a semiconductor device with consistent electric characteristics and improved reliability.
- An insulating film is first formed over an oxide semiconductor film.
- A buffer film is then applied over the insulating film.
- Oxygen is introduced to both the buffer film and the insulating film.
- A conductive film is deposited over the buffer film with added oxygen.
- An impurity element is added to the oxide semiconductor film using the conductive film as a mask.
Potential Applications: - Semiconductor manufacturing industry - Electronics industry for improved device performance
Problems Solved: - Variation in electric characteristics of semiconductor devices - Reliability issues in semiconductor devices
Benefits: - Consistent electric characteristics - Enhanced reliability of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Manufacturing Method for Enhanced Device Performance This technology can be utilized in the production of various electronic devices, leading to improved performance and reliability in the market.
Questions about the technology: 1. How does the addition of oxygen to the buffer film and insulating film impact the semiconductor device's performance? - The addition of oxygen helps stabilize the electric characteristics and improve the reliability of the semiconductor device.
2. What role does the conductive film play in the manufacturing process of the semiconductor device? - The conductive film acts as a mask for adding impurity elements to the oxide semiconductor film, ensuring precise doping for desired characteristics.
Original Abstract Submitted
Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.
